位置：首页 > IC中文资料 > C3M0120090J
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
C3M0120090J | Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features • New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • New low impedance package with driver source • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) be | WOLFSPEED |   | |
C3M0120090J | Silicon Carbide Power MOSFET 文件：1.27102 Mbytes Page：10 Pages | CREE 科锐 | | |
Silicon Carbide Power MOSFET 文件：1.12394 Mbytes Page：10 Pages | CREE 科锐 | | ||
丝印代码：E3M0120090J；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features • 3rd generation of SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source • Automotive q | WOLFSPEED | | ||
丝印代码：E3M0120090；Silicon Carbide Power MOSFET E-Series Automotive 文件：736.91 Kbytes Page：10 Pages | CREE 科锐 | | ||
丝印代码：E3M0120090J；Silicon Carbide Power MOSFET E-Series Automotive 文件：981.36 Kbytes Page：10 Pages | CREE 科锐 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE(科锐) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Cree/Wolfspeed |
22+ |
TO2638 D2Pak (7 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
|||
CREE |
23+ |
SOT263 |
8000 |
只做原装现货 |
|||
CREE |
23+ |
SOT263 |
7000 |
||||
CREE |
2447 |
TO-263-7 |
105000 |
800个/圆盘一级代理专营品牌!原装正品,优势现货,长 |
|||
CREE(科锐) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
CREE |
24+ |
SOT263 |
60000 |
全新原装现货 |
|||
CREE |
两年内 |
NA |
1441 |
实单价格可谈 |
|||
CREE |
23+ |
TO-263-7 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
C3M0120090J规格书下载地址
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DdatasheetPDF页码索引
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