Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：1.02091 Mbytes Page：12 Pages

1200 V Discrete Silicon Carbide MOSFETs

Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • Optimized package with separate driver source pin • Lower profile TO-247-4 package body • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits •

分立式碳化硅肖特基二极管

SiC N-Channel MOSFET

FEATURES ·High blocking voltage with low on-resistance ·High-speed switching with low capacitances ·Fast intrinsic diode with low reverse recovery APPLICATIONS ·Solar inverters ·High voltage DC/DC converters ·Switched mode power supplies ·Motor drives

Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • H

Silicon Carbide Power MOSFET

文件：858.99 Kbytes Page：11 Pages