位置：首页 > IC中文资料 > C3M0021120K
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
C3M0021120K | SiliconCarbidePowerMOSFETC3MTMMOSFETTechnologyN-ChannelEnhancementMode Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery | WOLFSPEED WOLFSPEED, INC. |  |   |
C3M0021120K | SiCN-ChannelMOSFET FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=28.8mΩ@VGS=15VTj=25℃ ·LowCapacitance ·AvalancheRuggedness APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·HighVoltageDC-DCConverters ·BatteryChargers | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
C3M0021120K | SiliconCarbidePowerMOSFETC3MTMMOSFETTechnology 文件：926.42 Kbytes Page：11 Pages | CreeCree, Inc 科锐 |  | |
SiliconCarbidePowerMOSFETC3MTMMOSFETTechnologyN-ChannelEnhancementMode Features •3rdgenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Reduceswitchinglossesandminimizegateringing •H | WOLFSPEED WOLFSPEED, INC. | | | |
SiliconCarbidePowerMOSFETC3MTMMOSFETTechnology 文件：807.28 Kbytes Page：10 Pages | CreeCree, Inc 科锐 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Wolfspeed |
24+ |
TUBE |
8316 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
|||
CREE |
22+ |
TO-247-3 |
20000 |
深圳原装现货正品有单价格可谈 |
|||
CREE |
23+ |
TO-247-4 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CREE |
两年内 |
NA |
16842 |
实单价格可谈 |
|||
CREE |
24+ |
TO-247-3 |
9000 |
只做原装，欢迎询价，量大价优 |
|||
CREE |
23+ |
TO-263-7 |
3050 |
市场最低 原装现货 假一罚百 可开原型号 |
|||
CREE |
23+ |
TO247-4 |
20000 |
||||
CREE(科锐) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
CREE/科锐 |
25+ |
TO-247 |
1800 |
原厂原装,价格优势 |
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DdatasheetPDF页码索引
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