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C3M价格
参考价格:¥29.1735
型号:C3M 品牌:Switchcraft 备注:这里有C3M多少钱,2025年最近7天走势,今日出价,今日竞价,C3M批发/采购报价,C3M行情走势销售排行榜,C3M报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
C3M | 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:CONN RCPT MALE XLR 3P SOLDER CUP 连接器,互连器件 圆形连接器组件 | ETC 知名厂家 | ETC | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features •3rdGenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequiremen | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features •C3MTMSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) • | WOLFSPEED WOLFSPEED, INC. | |||
SiC N-Channel MOSFET FEATURES ·HighSpeedSwitchingwithLowCapacitances ·HighBlockingVoltagewithLowOn-Resistance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·High-voltageCapacitiveLoads ·Motordrives | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Reduceswitchinglossesandminimizegateringing •H | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Reduceswitchinglossesandminimizegateringing •H | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery | WOLFSPEED WOLFSPEED, INC. | |||
SiC N-Channel MOSFET FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=28.8mΩ@VGS=15VTj=25℃ ·LowCapacitance ·AvalancheRuggedness APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·HighVoltageDC-DCConverters ·BatteryChargers | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdGenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequiremen | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •R | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •C3MTMSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) • | WOLFSPEED WOLFSPEED, INC. | |||
isc N-Channel MOSFET Transistor FEATURES DrainCurrent-ID=97A@TC=25℃ DrainSourceVoltage-VDSS=650V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=34mΩ(Max)@VGS=15V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiC N-Channel MOSFET FEATURES ·HighSpeedSwitchingwithLowCapacitances ·HighBlockingVoltagewithLowOn-Resistance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·High-voltageCapacitiveLoads ·Motordrives | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits • | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits • | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •C3MTMSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) • | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Reduceswitchinglossesandminimizegateringing •H | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery | WOLFSPEED WOLFSPEED, INC. | |||
SiC N-Channel MOSFET FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=43mΩ(TYP.)@VGS=15VTj=25℃ ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Reduceswitchinglossesandminimizegateringing •H | WOLFSPEED WOLFSPEED, INC. | |||
SiC N-Channel MOSFET FEATURES ·Highblockingvoltagewithlowon-resistance ·High-speedswitchingwithlowcapacitances ·Fastintrinsicdiodewithlowreverserecovery APPLICATIONS ·Solarinverters ·HighvoltageDC/DCconverters ·Switchedmodepowersupplies ·Motordrives | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enchancement Mode Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •R | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features •Optimizedpackagewithseparatedriversourcepin •LowerprofileTO-247-4packagebody •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits • | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdGenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequiremen | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •R | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •C3MTMSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) • | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •R | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdGenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequiremen | WOLFSPEED WOLFSPEED, INC. | |||
SiC N-Channel MOSFET FEATURES ·HighSpeedSwitchingwithLowCapacitances ·HighBlockingVoltagewithLowOn-Resistance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·High-voltageCapacitiveLoads ·Motordrives | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdGenerationSiCMOSFETtechnology •Lowinductancepackagewithdriversourcepin •7mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qr | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdGenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequiremen | WOLFSPEED WOLFSPEED, INC. | |||
SiC N-Channel MOSFET FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=60mΩ(TYP.)@VGS=15VTj=25℃ ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •R | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •C3MSiCMOSFETtechnology •HighblockingvoltagewithlowOn-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequirements •Incre | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •NewC3MSiCMOSFETtechnology •Newlowimpedancepackagewithdriversourcepin •HighblockingvoltagewithlowOn-resistance •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Lowoutputcapacitance(60pF) •Halogenfree,RoHScompliant •Widecreepage(~7mm)betweendra | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •C3MTMSiCMOSFETtechnology •Lowparasiticinductancewithseparatedriversourcepin •7mmofcreepagedistancebetweendrainandsource •HighblockingvoltagewithlowOn-resistance •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Lowoutputcapacitance(60pF) •Halog | WOLFSPEED WOLFSPEED, INC. | |||
SiC N-Channel MOSFET FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=78mΩ)@VGS=15VTc=25℃ ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·Renewableenergy ·EVbatterychargers ·HighvoltageDC/DCconverters ·SwitchModePowerSupplies | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •NewC3MTMSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr | WOLFSPEED WOLFSPEED, INC. | |||
SiC N-Channel MOSFET FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=78mΩ(TYP.)@VGS=15VTj=25℃ ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •C3MTMSiCMOSFETtechnology •HighblockingvoltagewithlowOn-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequirements •Inc | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •C3MTMSiCMOSFETtechnology •HighblockingvoltagewithlowOn-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequirements •Inc | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery | WOLFSPEED WOLFSPEED, INC. | |||
SiC N-Channel MOSFET FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=75mΩ(TYP.)@VGS=18VTj=25℃ ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdGenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequiremen | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdGenerationSiCMOSFETtechnology •Lowinductancepackagewithdriversourcepin •7mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qr | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •C3MTMSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) • | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •C3MSiCMOSFETtechnology •HighblockingvoltagewithlowOn-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequirements •Incre | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •NewC3MSiCMOSFETtechnology •HighblockingvoltagewithlowOn-resistance •Highspeedswitchingwithlowcapacitances •Newlowimpedancepackagewithdriversource •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant •Widecreepage(~7mm)be | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •C3MTMSiCMOSFETtechnology •Lowparasiticinductancewithseparatedriversourcepin •7mmofcreepagedistancebetweendrainandsource •HighblockingvoltagewithlowOn-resistance •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Lowoutputcapacitance(60pF) •Halog | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •C3MTMSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) • | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •C3MTMSiCMOSFETtechnology •HighblockingvoltagewithlowOn-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequirements •Inc | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •3rdgenerationSiCMOSFETtechnology •Lowimpedancepackagewithdriversourcepin •7mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •C3MSiCMOSFETtechnology •HighblockingvoltagewithlowOn-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequirements •Incre | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •NewC3MSiCMOSFETtechnology •HighblockingvoltagewithlowOn-resistance •Highspeedswitchingwithlowcapacitances •Newlowimpedancepackagewithdriversource •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant •Widecreepage(~7mm)be | WOLFSPEED WOLFSPEED, INC. | |||
C3M0350120D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features •C3MTMSiCMOSFETtechnology •HighblockingvoltagewithlowOn-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequirements •Inc | WOLFSPEED WOLFSPEED, INC. | |||
SiC N-Channel MOSFET FEATURES ·Highblockingvoltagewithlowon-resistance ·High-speedswitchingwithlowcapacitances ·Fastintrinsicdiodewithlowreverserecovery APPLICATIONS ·UPS ·HighvoltageDC/DCconverters ·Switchedmodepowersupplies ·Renewableenergy | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
C3M产品属性
- 类型
描述
- 型号
C3M
- 功能描述
XLR 连接器 3 PIN MALE RECEPT
- RoHS
否
- 制造商
Neutrik
- 标准
Standard XLR
- 产品类型
Connectors
- 型式
Female
- 位置/触点数量
3
- 端接类型
Solder
- 安装风格
Cable
- 方向
Vertical
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CREE |
24+ |
TO-247-4 |
534 |
原装现货,有上库存就有货,假一赔十 |
|||
CREE |
21+ |
TO-247 |
29000 |
只做原装正品假一赔十!正规渠道 |
|||
Wolfspeed, Inc. |
24+ |
TO-263-7 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
CREE |
20+ |
TO-247 |
2500 |
全新原装公司现货
|
|||
CREE(科锐) |
2023+ |
N/A |
4550 |
全新原装正品 |
|||
CREE |
24+ |
TO-247 |
9000 |
只做原装,欢迎询价,量大价优 |
|||
WOLFSPEED |
21+ |
- |
102 |
全新原装鄙视假货 |
|||
Cree |
24+ |
TO-247-4 |
12000 |
原装 |
|||
Wolfspeed, Inc. |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
CREE |
23+ |
SOT263 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
C3M规格书下载地址
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- C3EEG-1036G
- C3E-26.000-20-3050-X-R
- C3E-25.000-12-3030-XR
- C3DPS-2018M
- C3DG6
- C3DDG-4018G
- C3D25170H
- C3D20065D
- C3D20060D
- C3D1P7060Q
- C3D16065D
- C3D16060D
- C3D10170H
- C3D10065I
- C3D10065E
- C3D10065A
- C3998
- C3997
- C3992
- C3991
- C3990
- C-398Y
- C-398X
- C398T
- C-398SR
- C398S
- C398PB
- C398PA
- C398P
- C398N
- C398M
- C-398H
- C-398G
- C-398E
- C398E
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2019-3-7
DdatasheetPDF页码索引
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