3rd Generation 650 V, 16A Silicon Carbide Schottky

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

Silicon Carbide Schottky Diode

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封装/外壳：TO-220-2 包装：管件 描述：DIODE SCHOTTKY 650V 39A TO220-2 分立半导体产品 二极管 - 整流器 - 单

SiC肖特基二极管

碳化硅肖特基二极管

650 V Discrete Silicon Carbide Schottky Diodes

Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Recti

Silicon Carbide Schottky Diode

文件：1.03795 Mbytes Page：6 Pages

650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All