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C39价格
参考价格：￥18.9775
型号：C3900BA 品牌：Arcolectric 备注：这里有C39多少钱，2025年最近7天走势，今日出价，今日竞价，C39批发/采购报价，C39行情走势销售排行榜，C39报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
C39 | Pressure sensors Features PiezoresistiveMEMStechnology Smalldimensions:0.65×0.65mm² Squarediaphragm Measuredmedia(frontside): Drynon-aggressivegases. Unsuitableforsubstanceswhichreactwithsiliconor aluminum. WheatstonebridgewithmVoutput,ratiometrictosupply voltage Ra | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 |  |   |
Phase Control SCR 450 Amperes Average 2400 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors |  | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | | |
Silicon NPN epitaxial planer type(For 2GHz band low-noise amplification) For2GHzbandlow-noiseamplification ■Features ●HightransitionfrequencyfT. ●Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking. | PanasonicPanasonic Semiconductor 松下松下电器 |  | | |
Phase Control SCR 620 Amperes Avg 100-600 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 620 Amperes Avg 100-600 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 620 Amperes Avg 100-600 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 450 Amperes Average 2400 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 620 Amperes Avg 100-600 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 620 Amperes Avg 100-600 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 590 Amperes Avg 500-1200 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Phase Control SCR 620 Amperes Avg 100-600 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 590 Amperes Avg 500-1200 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Phase Control SCR 590 Amperes Avg 500-1200 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Phase Control SCR 590 Amperes Avg 500-1200 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Phase Control SCR 590 Amperes Avg 500-1200 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Phase Control SCR 590 Amperes Avg 500-1200 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Phase Control SCR 590 Amperes Avg 500-1200 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Phase Control SCR 590 Amperes Avg 500-1200 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 490 Amperes Average 2400 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 490 Amperes Avg 1300-1800 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 490 Amperes Avg 1300-1800 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 490 Amperes Avg 1300-1800 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 490 Amperes Avg 1300-1800 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 490 Amperes Avg 1300-1800 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Phase Control SCR 490 Amperes Avg 1300-1800 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX Powerex Power Semiconductors | | | |
Silicon NPN epitaxial planer type(For high-frequency amplification) SiliconNPNepitaxialplanartype Forhigh-frequencyamplification ■Features •OptimumforRFamplificationofFM/AMradios •HightransitionfrequencyfT •S-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking | PanasonicPanasonic Semiconductor 松下松下电器 | | | |
LOW POWER DUAL COMPARATORS SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  | | |
Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification) SiliconNPNepitaxialplanartype Forlow-frequencyoutputamplificationanddriveramplification Complementaryto2SA1534,2SA1534A ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •Allowingsupplywiththeradialtaping | PanasonicPanasonic Semiconductor 松下松下电器 | | | |
Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification) SiliconNPNepitaxialplanartype Forlow-frequencyoutputamplificationanddriveramplification Complementaryto2SA1534,2SA1534A ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •Allowingsupplywiththeradialtaping | PanasonicPanasonic Semiconductor 松下松下电器 | | | |
High-Definition CRT Display Video Output Driver Applications? High-DefinitionCRTDisplayVideoOutputApplications Features •HighfT:fT=2.0GHz. •Largecurrentcapacity:IC=500mA. •Micalesstype:TO-126plasticpackage. Applications •High-definitionCRTdisplayvideooutput,wide-bandamplifier. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 |  | | |
High-Definition CRT Display Video Output Applications High-DefinitionCRTDisplayVideoOutputApplications Features -HighfT:fT=400MHz. -Highbreakdownvoltage:VCEO=120Vmin. -SmallreversetransfercapacitanceandexcellentHFresponse:Cre=1.7pF/NPN,2.2pF/PNP. -ComplementaryPNPandNPNtypes. -AdoptionofFBET | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-Definition CRT Display Video Output Applications High-DefinitionCRTDisplayVideoOutputApplications Features •Highgain-bandwidthproduct:fT=300MHz. •Highbreakdownvoltage:VCEO=200Vmin. •Smallreversetransfercapacitanceandexcellenthighfrequencycharacteristics:Cre=1.5pF/NPN,1.8pF/PNP. •ComplementaryPNPandNPNtypes. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) SiliconNPNtriplediffusionplanartype Forhighbreakdownvoltagehigh-speedswitching ■Features ●High-speedswitching ●HighcollectortobasevoltageVCBO ●Wideareaofsafeoperation(ASO) ●SatisfactorylinearityoffowardcurrenttransferratiohFE ●Full-packpackagewhichcanbe | PanasonicPanasonic Semiconductor 松下松下电器 | | | |
Driver Applications??? DriverApplications Features •HighDCcurrentgain. •LargecurrentcapacityandwideASO. •On-chipZenerdiodeof60±10Vbetweencollectorandbase. •Uniformityincollector-to-basebreakdownvoltageduetotheadoptionofanaccurateimpuritydiffusionprocess. •Highinductiveloadhan | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
包装：散装 描述：SWITCH TOGGLE ON-OFF 开关 拨动开关 | BULGIN BULGIN COMPONENTS PLC |  | | |
Current output, high UV sensitivity, excellent linearity, low power consumption 文件：209.24 Kbytes Page：6 Pages | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 |  | | |
Current output, high UV sensitivity, excellent linearity, low power consumption 文件：209.24 Kbytes Page：6 Pages | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | | |
包装：袋 描述：RADSOK HOUSING FOR 8MM CONTACT 连接器，互连器件 外壳，护套 | ETC 知名厂家 | ETC | | |
160V / 1.5A Switching Applications 文件：66.58 Kbytes Page：5 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
160V / 1.5A Switching Applications 文件：437.79 Kbytes Page：7 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
Silicon NPN Power Transistors 文件：126.96 Kbytes Page：3 Pages | SAVANTIC Savantic, Inc. |  | |
| 替换型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Dual Comparators | PanasonicPanasonic Semiconductor 松下松下电器 | | | |
Dual Comparators | PanasonicPanasonic Semiconductor 松下松下电器 | | | |
BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output | IntersilIntersil Corporation |  | | |
BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output | IntersilIntersil Corporation | | | |
BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output | IntersilIntersil Corporation | | | |
BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output | IntersilIntersil Corporation | | | |
Dual Comparator | HitachiHitachi Semiconductor 日立日立公司 |  | | |
High-Performance Dual Comparator | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-Performance Dual Comparator | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
DUAL DIFFERENTIAL COMPARATORS | TITexas Instruments 德州仪器美国德州仪器公司 |  | | |
Dual Differential Comparator | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
SINGLE SUPPLY, LOW POWER DUAL COMPARATORS | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  | | |
Low Power Low Offset Voltage Dual Comparators | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 |  | | |
Dual Differential Comparators | TGSTiger Electronic Co.,Ltd |  | | |
Low power dual voltage comparator | ETC | ETC | | |
Low Power Dual Voltage Comparators | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | | |
DUAL VOLTAGE COMPARATOR | HTCHTC Korea TAEJIN Technology Co. 泰进韩国泰进技术股份有限公司 |  | | |
Low power dual voltage comparators | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Low Power Dual Voltage Comparators | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Low Offset Voltage Dual Comparators | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
Low Offset Voltage Dual Comparators | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
DUAL DIFFERENTIAL COMPARATORS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
DUAL DIFFERENTIAL COMPARATORS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
DUAL COMPARATOR | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 |  | | |
DUAL COMPARATOR | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  | | |
SINGLE-SUPPLY QUAD COMPARATOR | NJRCNew Japan Radio 新日本无线株式会社 |  | | |
SINGLE-SUPPLY DUAL COMPARATOR | NJRCNew Japan Radio 新日本无线株式会社 | | | |
Integrated Circuit Low Power, Low Offset, Dual Voltage Comparator | NTENTE Electronics |  | | |
DUAL COMPARATOR | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |  | | |
LOW POWER DUAL COMPARATORS | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
LOW POWER DUAL COMPARATORS | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | |
C39产品属性
- 类型
描述
- 型号
C39
- 制造商
Coilcraft Inc
- 功能描述
Designer's Kit, PL140 planar transformers, RoHS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROCKWELL |
23+ |
PLCC84 |
20000 |
全新原装假一赔十 |
|||
SIEMENS/西门子 |
24+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
SANYO/三洋 |
25+ |
TO3P |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
NA |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
Fujitsu |
1926+ |
TO-220 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
MAT/TOS |
24+ |
TO-220F |
157531 |
明嘉莱只做原装正品现货 |
|||
ADI/亚德诺 |
25+ |
原封装 |
18000 |
全新原装 |
|||
TEXAS |
24+/25+ |
421 |
原装正品现货库存价优 |
||||
SANYO |
23+ |
TO-3P |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
NEC |
24+ |
DIP8 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
C39芯片相关品牌
C39规格书下载地址
C39参数引脚图相关
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- ca851
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- C6016
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- C596C(IC)
- C596(IC)
- C577H
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- C555A
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- C4LS374AP
- C4558C
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- C-3880E
- C3866
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- C3806P
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C39数据表相关新闻
C3M0160120D封装TO-247-3场效应管N沟道MOSFET管mos管原装现货
C3M0160120D封装TO-247-3场效应管N沟道MOSFET管mos管原装现货
2025-2-28C3216X7T2E224M160AA原现价美
C3216X7T2E224M160AA原现价美
2024-7-24C44UVGT5900T81K电容器
KEMET的电容器在恶劣环境下具有300,000小时的使用寿命
2024-4-8C3225X7S1H106K250AB
进口代理
2023-3-18C3216X7R1H475KT000N电容4.7UF120650VX7R材质18138231376
联系人：刘冬英 电话：0755-83203002 手机：18138231376、18806643356 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 ShenzhenGuanghuaMicroTechnologyCo.，Ltd 公司地址：深圳市福田区振兴路华匀大厦1栋712室
2019-9-21C3D10060A
C3D10060A，全新原装当天发货或门市自取0755-82732291.
2019-9-6
DdatasheetPDF页码索引
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