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C39价格
参考价格：￥18.9775
型号：C3900BA 品牌：Arcolectric 备注：这里有C39多少钱，2024年最近7天走势，今日出价，今日竞价，C39批发/采购报价，C39行情走势销售排行榜，C39报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
C39 | Pressure sensors Features PiezoresistiveMEMStechnology Smalldimensions:0.65×0.65mm² Squarediaphragm Measuredmedia(frontside): Drynon-aggressivegases. Unsuitableforsubstanceswhichreactwithsiliconor aluminum. WheatstonebridgewithmVoutput,ratiometrictosupply voltage Ra | TDKTDK Corporation 东电化（中国）投资有限公司 |  |   |
Phase Control SCR 450 Amperes Average 2400 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX |  | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | | |
Silicon NPN epitaxial planer type(For 2GHz band low-noise amplification) For2GHzbandlow-noiseamplification ■Features ●HightransitionfrequencyfT. ●Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking. | PanasonicPanasonic Corporation 松下松下电器 |  | | |
Phase Control SCR 620 Amperes Avg 100-600 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 620 Amperes Avg 100-600 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 620 Amperes Avg 100-600 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 450 Amperes Average 2400 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 620 Amperes Avg 100-600 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 620 Amperes Avg 100-600 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 590 Amperes Avg 500-1200 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Phase Control SCR 620 Amperes Avg 100-600 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 590 Amperes Avg 500-1200 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Phase Control SCR 590 Amperes Avg 500-1200 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Phase Control SCR 590 Amperes Avg 500-1200 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Phase Control SCR 590 Amperes Avg 500-1200 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Phase Control SCR 590 Amperes Avg 500-1200 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Phase Control SCR 590 Amperes Avg 500-1200 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 450 Amperes Average 500-1300 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
SCR 850A RMS UP TO 1300 VOLTS SCR850ARMSUPTO1300VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Phase Control SCR 590 Amperes Avg 500-1200 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 490 Amperes Average 2400 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 490 Amperes Avg 1300-1800 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 490 Amperes Avg 1300-1800 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 490 Amperes Avg 1300-1800 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 490 Amperes Avg 1300-1800 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 490 Amperes Avg 1300-1800 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Phase Control SCR 490 Amperes Avg 1300-1800 Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □ | POWEREX POWEREX | | | |
Silicon NPN epitaxial planer type(For high-frequency amplification) SiliconNPNepitaxialplanartype Forhigh-frequencyamplification ■Features •OptimumforRFamplificationofFM/AMradios •HightransitionfrequencyfT •S-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking | PanasonicPanasonic Corporation 松下松下电器 | | | |
LOW POWER DUAL COMPARATORS SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification) SiliconNPNepitaxialplanartype Forlow-frequencyoutputamplificationanddriveramplification Complementaryto2SA1534,2SA1534A ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •Allowingsupplywiththeradialtaping | PanasonicPanasonic Corporation 松下松下电器 | | | |
Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification) SiliconNPNepitaxialplanartype Forlow-frequencyoutputamplificationanddriveramplification Complementaryto2SA1534,2SA1534A ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •Allowingsupplywiththeradialtaping | PanasonicPanasonic Corporation 松下松下电器 | | | |
High-Definition CRT Display Video Output Driver Applications? High-DefinitionCRTDisplayVideoOutputApplications Features •HighfT:fT=2.0GHz. •Largecurrentcapacity:IC=500mA. •Micalesstype:TO-126plasticpackage. Applications •High-definitionCRTdisplayvideooutput,wide-bandamplifier. | SANYOSanyo 三洋三洋电机株式会社 |  | | |
High-Definition CRT Display Video Output Applications High-DefinitionCRTDisplayVideoOutputApplications Features -HighfT:fT=400MHz. -Highbreakdownvoltage:VCEO=120Vmin. -SmallreversetransfercapacitanceandexcellentHFresponse:Cre=1.7pF/NPN,2.2pF/PNP. -ComplementaryPNPandNPNtypes. -AdoptionofFBET | SANYOSanyo 三洋三洋电机株式会社 | | | |
High-Definition CRT Display Video Output Applications High-DefinitionCRTDisplayVideoOutputApplications Features •Highgain-bandwidthproduct:fT=300MHz. •Highbreakdownvoltage:VCEO=200Vmin. •Smallreversetransfercapacitanceandexcellenthighfrequencycharacteristics:Cre=1.5pF/NPN,1.8pF/PNP. •ComplementaryPNPandNPNtypes. | SANYOSanyo 三洋三洋电机株式会社 | | | |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) SiliconNPNtriplediffusionplanartype Forhighbreakdownvoltagehigh-speedswitching ■Features ●High-speedswitching ●HighcollectortobasevoltageVCBO ●Wideareaofsafeoperation(ASO) ●SatisfactorylinearityoffowardcurrenttransferratiohFE ●Full-packpackagewhichcanbe | PanasonicPanasonic Corporation 松下松下电器 | | | |
包装：散装 描述：SWITCH TOGGLE ON-OFF 开关 拨动开关 | BULGIN BULGIN COMPONENTS PLC |  | | |
Current output, high UV sensitivity, excellent linearity, low power consumption 文件：209.24 Kbytes Page：6 Pages | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 |  | | |
Current output, high UV sensitivity, excellent linearity, low power consumption 文件：209.24 Kbytes Page：6 Pages | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | | |
包装：袋 描述：RADSOK HOUSING FOR 8MM CONTACT 连接器，互连器件 外壳，护套 | Amphenol Tuchel Industrial Amphenol Tuchel Industrial |  | | |
160V / 1.5A Switching Applications 文件：66.58 Kbytes Page：5 Pages | SANYOSanyo 三洋三洋电机株式会社 | | | |
160V / 1.5A Switching Applications 文件：437.79 Kbytes Page：7 Pages | SANYOSanyo 三洋三洋电机株式会社 | | | |
Silicon NPN Power Transistors 文件：126.96 Kbytes Page：3 Pages | SAVANTIC Savantic, Inc. |  | | |
Phase Control SCR 620 Amperes Avg 100-400 Volts 文件：163.12 Kbytes Page：4 Pages | POWEREX POWEREX | | |
| 替换型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Dual Comparators | PanasonicPanasonic Corporation 松下松下电器 | | | |
Dual Comparators | PanasonicPanasonic Corporation 松下松下电器 | | | |
BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
Dual Comparator | HitachiHitachi, Ltd. 日立公司 |  | | |
High-Performance Dual Comparator | SANYOSanyo 三洋三洋电机株式会社 | | | |
High-Performance Dual Comparator | SANYOSanyo 三洋三洋电机株式会社 | | | |
DUAL DIFFERENTIAL COMPARATORS | TITexas Instruments 德州仪器美国德州仪器公司 |  | | |
Dual Differential Comparator | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
SINGLE SUPPLY, LOW POWER DUAL COMPARATORS | MotorolaMotorola, Inc 摩托罗拉 |  | | |
Low Power Low Offset Voltage Dual Comparators | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 |  | | |
Dual Differential Comparators | TGSTiger Electronic Co.,Ltd |  | | |
Low power dual voltage comparator | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | | |
Low Power Dual Voltage Comparators | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | | |
DUAL VOLTAGE COMPARATOR | HTCHTC KOREA 韩国泰进技术股份有限公司 |  | | |
Low power dual voltage comparators | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Low Power Dual Voltage Comparators | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Low Offset Voltage Dual Comparators | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
Low Offset Voltage Dual Comparators | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
DUAL DIFFERENTIAL COMPARATORS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
DUAL DIFFERENTIAL COMPARATORS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
DUAL COMPARATOR | MitsubishiMITSUBISHI electlic 三菱电机 |  | | |
DUAL COMPARATOR | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
SINGLE-SUPPLY QUAD COMPARATOR | NJRCNew Japan Radio 新日本无线株式会社 |  | | |
SINGLE-SUPPLY DUAL COMPARATOR | NJRCNew Japan Radio 新日本无线株式会社 | | | |
Integrated Circuit Low Power, Low Offset, Dual Voltage Comparator | NTENTE Electronics, Inc |  | | |
DUAL COMPARATOR | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  | | |
LOW POWER DUAL COMPARATORS | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LOW POWER DUAL COMPARATORS | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
C39产品属性
- 类型
描述
- 型号
C39
- 制造商
Coilcraft Inc
- 功能描述
Designer's Kit, PL140 planar transformers, RoHS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROCKWELL |
23+ |
PLCC84 |
2900 |
绝对现货库存 |
|||
TOSHIBA/东芝 |
19+ |
TO |
1200 |
进口原装现货 |
|||
isc |
2024 |
B-PUK,TO-200AC |
10000 |
国产品牌isc,可替代原装 |
|||
NEC |
22+ |
DIP8 |
12245 |
现货,原厂原装假一罚十! |
|||
NEC |
18+ |
DIP |
85600 |
保证进口原装可开17%增值税发票 |
|||
Fujitsu |
1926+ |
TO-220 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
PANASONIC |
23+ |
TO-TO-220F |
37650 |
全新原装真实库存含13点增值税票! |
|||
ADI/亚德诺 |
21+ |
原封装 |
13880 |
公司只售原装,支持实单 |
|||
23+ |
N/A |
49400 |
正品授权货源可靠 |
||||
PLCC |
23+ |
NA/ |
6871 |
原装现货,当天可交货,原型号开票 |
C39芯片相关品牌
C39规格书下载地址
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联系人：刘冬英 电话：0755-83203002 手机：18138231376、18806643356 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 ShenzhenGuanghuaMicroTechnologyCo.，Ltd 公司地址：深圳市福田区振兴路华匀大厦1栋712室
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2019-3-7
DdatasheetPDF页码索引
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