Si-Epitaxial PlanarTransistors

General Purpose Si-Epitaxial Planar Transistors • Power dissipation 625 mW • Plastic case TO-92(10D3) • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)

● High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 (PNP)

NPN Plastic-Encapsulate Transistors

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Amplifier Transistors NPN Silicon

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