MAGNETICS FOR RF, POWER,FILTER AND DATA APPLICATIONS

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Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions\nSilicon NPN transistor in a SOT-23 Plastic Package.    High fT.Applications\n   High frequency general-purpose amplifier applications.;

NPN TRIPLE DIFFUSED(for Switching Regulator and High Voltage)

TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE. SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB

For Switching Regulator

800V/1.5A Switching Regulator Applications Features • High breakdown voltage (VCBO≥900V). • Fast switching speed. • Wide ASO.

包装：散装 描述：SCOTCH EXPRESSIONS WASHI TAPE C3 胶带，粘合剂，材料 胶带

包装：盒 描述：SCOTCH EXPRESSIONS WASHI TAPE C3 胶带，粘合剂，材料 胶带

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 610 mV to 940 mV • Total power dissipation: max. 400 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100 Tested for Load Mismatch