MOLOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE

FEATURES • 16 or 24 pin ceramic dip • Minimum of external components required • Easily adjusts for yoke errors • Accuracy better than 0.5 Max(C312) • Bandwidth compatible with 10MHz systems • Both geometry and focus available

MONOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE

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32 位 RISC 处理器

TYPE CMP / CL3P

3C 18 7/26 BC FLEX FLEX TYPE CMP / CL3P

TYPE CMP / CL3P

6C 18 7/26 BC FLEX FLEX TYPE CMP / CL3P

TYPE CMP / CL3P

8C 18 7/26 BC FLEX FLEX TYPE CMP / CL3P

TYPE CMP / CL3P

10C 18 7/26 BC FLEX FLEX TYPE CMP / CL3P

TYPE CMP / CL3P

12C 18 7/26 BC FLEX FLEX TYPE CMP / CL3P

TYPE CL2P

5C 18 7/26 BC FLEX FLEX TYPE CL2P

TYPE CL2P

2C 14 19/.0147 BC FLEX PVDF TYPE CL2P

包装：散装 描述：CABLE 3COND 18AWG NATURAL 1000' 电缆，电线 多芯导线

线缆线束

线缆线束

包装：散装 描述：CABLE 3COND 18AWG GREEN 1000' 电缆，电线 多芯导线

2C 16AWG 19/Strands BC PVC, PVC COMMUNICATION & CONTROL CABLE

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2C 14AWG (19/.0147) BC PVC, PVC COMMUNICATION & CONTROL CABLE

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2C 12 19/0.0185 BC FLEX FLEX TYPE CL3P

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Sequencing Hotswap Controllers

General Description The HV302 and HV312 Hotswap Controllers perform current limiting, circuit breaker protection, over and under voltage detection power management functions during insertion of cards or modules into live backplanes and connectors. Theymaybe used in systems where active contro

N-Channel Silicon Junction Field Effect Transistor

Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: • High Power Gain: 10dB Min at 400MHz • High Transconductance: 4000 µmho Min at 400MHz • Low Crss: 1pF Max • High (Yfs) / Ciss

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

Operational Amplifiers

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