CREE Silicon Carbide MOSFET Evaluation Kit

Description: This Evaluation kit is meant to demonstrate the high performance of all CREE 1200V MOSFETs and CREE Schottky diodes (SBD) in standard TO-247 package. The kit includes two Cree 80mOhm, 1200V CREE MOSFETs and two 1200V 20A schottky diodes; a half bridge configured evaluation board that

Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density •

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 80mΩ（TYP.）@VGS= 20V TJ=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives

Silicon Carbide Power MOSFET Z-FETTM MOSFET

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SiC MOS

碳化硅 MOSFET

1200 V Discrete Silicon Carbide MOSFETs

Silicon Carbide Power MOSFET

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1200V SIC POWER MOSFET

• Positive temperature characteristics, easy to parallel. • Low on-resistance Typ. RDS(on) = 77mΩ . • Fast switching speed and low switching losses. • Very fast and robust intrinsic body diode. • Process of non-bright Tin electroplatin