Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode

Features • 2nd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low On-Resistance • High speed switching with low capacitances • Resistant to latch-up • Halogen Free, RoHS Co

Silicon Carbide Power MOSFET C2M MOSFET Technology

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SiC N-Channel MOSFET

FEATURES ·High blocking voltage with low On-Resistance ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives

Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode

Features • 2nd generation SiC MOSFET technology • High blocking voltage with low On-Resistance • High speed switching with low capacitances • Resistant to latch-up • Halogen Free, RoHS Compliant Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density

Silicon Carbide Power MOSFET C2MTM MOSFET Technology

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