C2M晶体管资料

  • C2M100-28别名:C2M100-28三极管、C2M100-28晶体管、C2M100-28晶体三极管

  • C2M100-28生产厂家:印度Bharat电子有限股份公司

  • C2M100-28制作材料:Si-NPN

  • C2M100-28性质:超高频/特高频 (UHF)_功率放大 (L)

  • C2M100-28封装形式

  • C2M100-28极限工作电压:60V

  • C2M100-28最大电流允许值:12A

  • C2M100-28最大工作频率:400MHZ

  • C2M100-28引脚数

  • C2M100-28最大耗散功率:250W

  • C2M100-28放大倍数

  • C2M100-28图片代号:NO

  • C2M100-28vtest:60

  • C2M100-28htest:400000000

  • C2M100-28atest:12

  • C2M100-28wtest:250

  • C2M100-28代换 C2M100-28用什么型号代替

C2M价格

参考价格:¥443.4167

型号:C2M0025120D 品牌:Cree 备注:这里有C2M多少钱,2024年最近7天走势,今日出价,今日竞价,C2M批发/采购报价,C2M行情走势销售排行榜,C2M报价。
型号 功能描述 生产厂家&企业 LOGO 操作

N-Channel Enhancement Mode

SiliconCarbidePowerMOSFETC2M™MOSFETTechnology N-ChannelEnhancementMode Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •ResistanttoLatch-Up •HalogenFree,Ro

CreeCree Inc.

科锐科锐半导体制造商

Cree

Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •ResistanttoLatch-Up •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •ReducedCoolingRequirements •I

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

N-Channel Enhancement Mode

N-ChannelEnhancementMode Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •ResistanttoLatch-Up •HalogenFree,RoHSCompliant Benefts •HigherSystemEffciency •

CreeCree Inc.

科锐科锐半导体制造商

Cree

Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •ResistanttoLatch-Up •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •ReducedCoolingRequirements •IncreasedPowerDensity

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode

Features •2ndgenerationSiCMOSFETtechnology •HighblockingvoltagewithlowOn-Resistance •Highspeedswitchingwithlowcapacitances •Resistanttolatch-up •HalogenFree,RoHSCompliant Benefits •Highersystemefficiency •Reducedcoolingrequirements •Increasedpowerdensity

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

SiC N-Channel MOSFET

FEATURES ·HighblockingvoltagewithlowOn-Resistance ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode

Features •2ndgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •HighblockingvoltagewithlowOn-Resistance •Highspeedswitchingwithlowcapacitances •Resistanttolatch-up •HalogenFree,RoHSCo

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

CREE Silicon Carbide MOSFET Evaluation Kit

Description: ThisEvaluationkitismeanttodemonstratethehighperformanceofallCREE1200VMOSFETsandCREESchottkydiodes(SBD)instandardTO-247package.ThekitincludestwoCree80mOhm,1200VCREEMOSFETsandtwo1200V20Aschottkydiodes;ahalfbridgeconfiguredevaluationboardthat

CreeCree Inc.

科锐科锐半导体制造商

Cree

Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •ReducedCoolingRequirements •IncreasedPowerDensity •

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

N-Channel Enhancement Mode

SiliconCarbidePowerMOSFETZ-FET™MOSFET N-ChannelEnhancementMode Features •HighSpeedSwitchingwithLowCapacitances •HighBlockingVoltagewithLowRDS(on) •EasytoParallelandSimpletoDrive •ResistanttoLatch-Up •HalogenFree,RoHSCompliant Benefts •HigherSystem

CreeCree Inc.

科锐科锐半导体制造商

Cree

Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •ResistanttoLatch-Up •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •ReducedCoolingRequirements •I

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •ResistanttoLatch-Up •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •ReducedCoolingRequirements •I

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features •HighSpeedSwitchingwithLowCapacitances •HighBlockingVoltagewithLowRDS(on) •EasytoParallelandSimpletoDrive •Ultra-lowDrain-gatecapacitance •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •IncreasedSystemSwitchingFrequency •ReducedCool

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

SiC N-Channel MOSFET

FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=1.4Ω(MAX)@VGS=20VTj=25℃ ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·High-voltageCapacitiveLoads ·Motordrives

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel Enhancement Mode

文件:961.44 Kbytes Page:10 Pages

CreeCree Inc.

科锐科锐半导体制造商

Cree

Silicon Carbide Power MOSFET C2MTM MOSFET Technology

文件:1.19749 Mbytes Page:10 Pages

CreeCree Inc.

科锐科锐半导体制造商

Cree

Silicon Carbide Power MOSFET C2M MOSFET Technology

文件:1.14124 Mbytes Page:10 Pages

CreeCree Inc.

科锐科锐半导体制造商

Cree

Silicon Carbide Power MOSFET Z-FETTM MOSFET

文件:869.12 Kbytes Page:9 Pages

CreeCree Inc.

科锐科锐半导体制造商

Cree

Silicon Carbide Power MOSFET

文件:1.20554 Mbytes Page:10 Pages

CreeCree Inc.

科锐科锐半导体制造商

Cree

Silicon Carbide Power MOSFET C2M MOSFET Technology

文件:1.14011 Mbytes Page:10 Pages

CreeCree Inc.

科锐科锐半导体制造商

Cree

Silicon Carbide Power MOSFET

文件:1.10528 Mbytes Page:10 Pages

CreeCree Inc.

科锐科锐半导体制造商

Cree

Silicon Carbide Power MOSFET

文件:962.37 Kbytes Page:10 Pages

CreeCree Inc.

科锐科锐半导体制造商

Cree

Silicon Carbide Power MOSFET Z-FETTM MOSFET

文件:620.11 Kbytes Page:7 Pages

CreeCree Inc.

科锐科锐半导体制造商

Cree

Silicon Carbide Power MOSFET

文件:1.05392 Mbytes Page:10 Pages

CreeCree Inc.

科锐科锐半导体制造商

Cree

Silicon Carbide Power MOSFET

文件:1.29914 Mbytes Page:10 Pages

CreeCree Inc.

科锐科锐半导体制造商

Cree

MTR MAIN RING T-SURFACE 200A 2 SPACE QO

文件:125.31 Kbytes Page:2 Pages

SCHNEIDERSchneider electric

施耐德施耐德电气

SCHNEIDER

包装:散装 描述:OSCILLATOR 晶体,振荡器,谐振器 振荡器

ABRACONAbracon Corporation

阿布雷肯

ABRACON

NPN SILICON RF POWER TRANSISTOR

文件:15.79 Kbytes Page:1 Pages

ASI

Advanced Semiconductor, Inc

ASI

C2M产品属性

  • 类型

    描述

  • 型号

    C2M

  • 功能描述

    MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-5-28 18:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CREE/科锐
24+
TO247
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
Cree/Wolfspe
23+
TO247-3
36880
只做原装,QQ询价有询必回
SILICON
20+
SMD
880000
明嘉莱只做原装正品现货
CREE
1926+
IGBT
585
只做原装正品现货!或订货假一赔十!
CREE(科锐)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
CREE
23/22+
NA
165
代理渠道.实单必成
Wolfspeed
18+
NA
3000
进口原装正品优势供应QQ3171516190
CREE全系列可接受订货
23+
NA
9808
CREE进口代理原装优势供应全系列可订货QQ1304306553
Wolfspeed
22+
Tube
5710
只做原装进口货
CREE
22+23+
TO-247
24466
绝对原装正品现货,全新深圳原装进口现货

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  • WALSIN
  • WURTH

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  • C2012X5R1A225M-60毫安稳压电荷泵电压逆变器

    TPS6040x是一个系列器件产生一个不受管制的负输出电压的输入电压范围从1.6V至5.5V的设备通常提供了5V或3.3V由于preregulated供应铁路宽输入电压范围,两个或三个镍镉,镍氢电池或碱性电池,以及一个锂离子电池动力的。只有三个外部1μF电容需要构建一个完整的电荷泵DC/DC逆变器。组装在5引脚SOT23封装,完整的转换器,可以建在一个50平方毫米的电路板面积。额外的电路板面积元件数量的减少是通过取代肖特基二极管,通常需要启动成积体电路的负荷。TPS6040x能够以一个典型的转换效率,更大的一个最大输出电流60毫安在很宽的输出电流范围内超过90%。3与20千赫,5

    2012-12-28