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C2M晶体管资料
C2M100-28别名:C2M100-28三极管、C2M100-28晶体管、C2M100-28晶体三极管
C2M100-28生产厂家:印度Bharat电子有限股份公司
C2M100-28制作材料:Si-NPN
C2M100-28性质:超高频/特高频 (UHF)_功率放大 (L)
C2M100-28封装形式:
C2M100-28极限工作电压:60V
C2M100-28最大电流允许值:12A
C2M100-28最大工作频率:400MHZ
C2M100-28引脚数:
C2M100-28最大耗散功率:250W
C2M100-28放大倍数:
C2M100-28图片代号:NO
C2M100-28vtest:60
C2M100-28htest:400000000
- C2M100-28atest:12
C2M100-28wtest:250
C2M100-28代换 C2M100-28用什么型号代替:
C2M价格
参考价格:¥443.4167
型号:C2M0025120D 品牌:Cree 备注:这里有C2M多少钱,2024年最近7天走势,今日出价,今日竞价,C2M批发/采购报价,C2M行情走势销售排行榜,C2M报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
N-Channel Enhancement Mode SiliconCarbidePowerMOSFETC2M™MOSFETTechnology N-ChannelEnhancementMode Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •ResistanttoLatch-Up •HalogenFree,Ro | CreeCree Inc. 科锐科锐半导体制造商 | |||
Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •ResistanttoLatch-Up •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •ReducedCoolingRequirements •I | WOLFSPEED WOLFSPEED, INC. | |||
N-Channel Enhancement Mode N-ChannelEnhancementMode Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •ResistanttoLatch-Up •HalogenFree,RoHSCompliant Benefts •HigherSystemEffciency • | CreeCree Inc. 科锐科锐半导体制造商 | |||
Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •ResistanttoLatch-Up •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •ReducedCoolingRequirements •IncreasedPowerDensity | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features •2ndgenerationSiCMOSFETtechnology •HighblockingvoltagewithlowOn-Resistance •Highspeedswitchingwithlowcapacitances •Resistanttolatch-up •HalogenFree,RoHSCompliant Benefits •Highersystemefficiency •Reducedcoolingrequirements •Increasedpowerdensity | WOLFSPEED WOLFSPEED, INC. | |||
SiC N-Channel MOSFET FEATURES ·HighblockingvoltagewithlowOn-Resistance ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features •2ndgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •HighblockingvoltagewithlowOn-Resistance •Highspeedswitchingwithlowcapacitances •Resistanttolatch-up •HalogenFree,RoHSCo | WOLFSPEED WOLFSPEED, INC. | |||
CREE Silicon Carbide MOSFET Evaluation Kit Description: ThisEvaluationkitismeanttodemonstratethehighperformanceofallCREE1200VMOSFETsandCREESchottkydiodes(SBD)instandardTO-247package.ThekitincludestwoCree80mOhm,1200VCREEMOSFETsandtwo1200V20Aschottkydiodes;ahalfbridgeconfiguredevaluationboardthat | CreeCree Inc. 科锐科锐半导体制造商 | |||
Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •ReducedCoolingRequirements •IncreasedPowerDensity • | WOLFSPEED WOLFSPEED, INC. | |||
N-Channel Enhancement Mode SiliconCarbidePowerMOSFETZ-FET™MOSFET N-ChannelEnhancementMode Features •HighSpeedSwitchingwithLowCapacitances •HighBlockingVoltagewithLowRDS(on) •EasytoParallelandSimpletoDrive •ResistanttoLatch-Up •HalogenFree,RoHSCompliant Benefts •HigherSystem | CreeCree Inc. 科锐科锐半导体制造商 | |||
Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •ResistanttoLatch-Up •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •ReducedCoolingRequirements •I | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •ResistanttoLatch-Up •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •ReducedCoolingRequirements •I | WOLFSPEED WOLFSPEED, INC. | |||
Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features •HighSpeedSwitchingwithLowCapacitances •HighBlockingVoltagewithLowRDS(on) •EasytoParallelandSimpletoDrive •Ultra-lowDrain-gatecapacitance •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •IncreasedSystemSwitchingFrequency •ReducedCool | WOLFSPEED WOLFSPEED, INC. | |||
SiC N-Channel MOSFET FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=1.4Ω(MAX)@VGS=20VTj=25℃ ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·High-voltageCapacitiveLoads ·Motordrives | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-Channel Enhancement Mode 文件:961.44 Kbytes Page:10 Pages | CreeCree Inc. 科锐科锐半导体制造商 | |||
Silicon Carbide Power MOSFET C2MTM MOSFET Technology 文件:1.19749 Mbytes Page:10 Pages | CreeCree Inc. 科锐科锐半导体制造商 | |||
Silicon Carbide Power MOSFET C2M MOSFET Technology 文件:1.14124 Mbytes Page:10 Pages | CreeCree Inc. 科锐科锐半导体制造商 | |||
Silicon Carbide Power MOSFET Z-FETTM MOSFET 文件:869.12 Kbytes Page:9 Pages | CreeCree Inc. 科锐科锐半导体制造商 | |||
Silicon Carbide Power MOSFET 文件:1.20554 Mbytes Page:10 Pages | CreeCree Inc. 科锐科锐半导体制造商 | |||
Silicon Carbide Power MOSFET C2M MOSFET Technology 文件:1.14011 Mbytes Page:10 Pages | CreeCree Inc. 科锐科锐半导体制造商 | |||
Silicon Carbide Power MOSFET 文件:1.10528 Mbytes Page:10 Pages | CreeCree Inc. 科锐科锐半导体制造商 | |||
Silicon Carbide Power MOSFET 文件:962.37 Kbytes Page:10 Pages | CreeCree Inc. 科锐科锐半导体制造商 | |||
Silicon Carbide Power MOSFET Z-FETTM MOSFET 文件:620.11 Kbytes Page:7 Pages | CreeCree Inc. 科锐科锐半导体制造商 | |||
Silicon Carbide Power MOSFET 文件:1.05392 Mbytes Page:10 Pages | CreeCree Inc. 科锐科锐半导体制造商 | |||
Silicon Carbide Power MOSFET 文件:1.29914 Mbytes Page:10 Pages | CreeCree Inc. 科锐科锐半导体制造商 | |||
MTR MAIN RING T-SURFACE 200A 2 SPACE QO 文件:125.31 Kbytes Page:2 Pages | SCHNEIDERSchneider electric 施耐德施耐德电气 | |||
包装:散装 描述:OSCILLATOR 晶体,振荡器,谐振器 振荡器 | ABRACONAbracon Corporation 阿布雷肯 | |||
NPN SILICON RF POWER TRANSISTOR 文件:15.79 Kbytes Page:1 Pages | ASI Advanced Semiconductor, Inc |
C2M产品属性
- 类型
描述
- 型号
C2M
- 功能描述
MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CREE/科锐 |
24+ |
TO247 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
Cree/Wolfspe |
23+ |
TO247-3 |
36880 |
只做原装,QQ询价有询必回 |
|||
SILICON |
20+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
CREE |
1926+ |
IGBT |
585 |
只做原装正品现货!或订货假一赔十! |
|||
CREE(科锐) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
CREE |
23/22+ |
NA |
165 |
代理渠道.实单必成 |
|||
Wolfspeed |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
|||
CREE全系列可接受订货 |
23+ |
NA |
9808 |
CREE进口代理原装优势供应全系列可订货QQ1304306553 |
|||
Wolfspeed |
22+ |
Tube |
5710 |
只做原装进口货 |
|||
CREE |
22+23+ |
TO-247 |
24466 |
绝对原装正品现货,全新深圳原装进口现货 |
C2M规格书下载地址
C2M参数引脚图相关
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- C-3001
- c3000
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- C-2R7-M
- C-2R2-M
- C2Q750
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- C2Q375
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- C2Q3.5
- C2Q250
- C2Q2.5
- C2Q1.5
- C2Q1.25
- C2Q_17
- C2Q_12
- C2P04AC
- C2M70-28R
- C2M60-28R
- C2M50-28
- C2M200S
- C2M100-28A
- C2M100-28
- C2LG6-F
- C2-C6
- C2955
- C291T
- C291S
- C291PB
- C291PA
- C291P
- C291N
- C291M
- C291E
- C2910A
- C290T
- C290S
- C290PB
- C290PA
- C290P
- C290N
- C290M
- C290F
- C2-8Z
- C266PC388
- C266P
- C266
- C2655
- C2610
- C25-28
- C25-12
- C2482
- C2481
- C2383
- C233A...U
- C232A...U
- C231A...U3
- C231A...U
- C230U
- C230M
- C230F
- C230E
- C230D
C2M数据表相关新闻
C3200-0332
优势渠道
2024-1-2C315C105K3R5TA
C315C105K3R5TA
2023-10-10C19D903205P1375
C19D903205P1375OTHER20+标准封装 C8051F001SILICONLABS20+标准封装 C8051F023-GQSILICONLABS20+标准封装 CAT24C04WICATALYSTSEMICONDUCTOR20+标准封装 CAT24C08WI-GT3CATALYSTSEMICONDUCTOR20+标准封装 CAT28F010G-12(PROG)OTHER20+标准封装 CMCPCI102BRCALIFORNIAMICRODEVICES20+标准封装 CP
2021-6-5C2M0040120D 碳化硅功率MOSFET SIC 深圳市正纳电子有限公司
C2M0040120D
2020-12-23C1CB00002620
C1CB00002620,当天发货0755-82732291全新原装现货或门市自取.
2020-11-11C2012X5R1A225M-60毫安稳压电荷泵电压逆变器
TPS6040x是一个系列器件产生一个不受管制的负输出电压的输入电压范围从1.6V至5.5V的设备通常提供了5V或3.3V由于preregulated供应铁路宽输入电压范围,两个或三个镍镉,镍氢电池或碱性电池,以及一个锂离子电池动力的。只有三个外部1μF电容需要构建一个完整的电荷泵DC/DC逆变器。组装在5引脚SOT23封装,完整的转换器,可以建在一个50平方毫米的电路板面积。额外的电路板面积元件数量的减少是通过取代肖特基二极管,通常需要启动成积体电路的负荷。TPS6040x能够以一个典型的转换效率,更大的一个最大输出电流60毫安在很宽的输出电流范围内超过90%。3与20千赫,5
2012-12-28
DdatasheetPDF页码索引
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