NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)?

DESCRIPTION 2SC2540 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. APPLICATION 30 to 35 watts output power amplifiers in VHF band mobile radio applications.

40A GLASS PASSIVATED AVALANCHE RECTIFIER CELL

Features Glass Passivated Die Construction High Power Capacity Avalanche Voltage 24 to 32 Volts High Surge Current Capability Die Size 220 mil HEX Mechanical Data Case: Protected with Silicon Rubber Terminal: Slug, Cu with Ag Plated Polarity: Indicated by Large Slug on

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High voltage ,high speed switching • High reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

COMMUNICATION CABLE

文件：73.62 Kbytes Page：1 Pages

包装：线轴 描述：CABLE 2COND 20AWG GRY SHLD 1000' 电缆，电线 多芯导线

Silicon NPN Power Transistors

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COMMUNICATION CABLE

文件：73.82 Kbytes Page：1 Pages

包装：线轴 描述：CABLE 4COND 18AWG GRAY SHLD 500' 电缆，电线 多芯导线

线缆线束

杜邦线/端子排线/电子线

线对板连接器

N-channel enhancement mode vertical D-MOS transistors

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT54 (TO-92) variant package. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown • Low RDSon. APPLICATIONS • Line current interruptor in telephone sets • Relay, high-speed a

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit