Channel Photomultipliers

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

Channel Photomultipliers

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

Channel Photomultipliers

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

Channel Photomultipliers

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

Channel Photomultipliers

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

Channel Photomultipliers

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)?

2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

RF Power Transistor

2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers in VHF band mobile radio applications.

RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE

DESCRIPTION\n2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications.FEATURES\n● High power gain: Gpe ≥ 10.7dB\n   @VCC = 13.5V, PO = 3.5W, f = 175MHz\n● TO-39 metal seeled package for high reliability.\n● Emitte ● High power gain: Gpe ≥ 10.7dB\n   @VCC = 13.5V, PO = 3.5W, f = 175MHz\n● TO-39 metal seeled package for high reliability.\n● Emitter electrode is connected electrically to the caseAPPLICATION\n   1 to 3 watt power amplifiers in VHF band mobile radio applications.;

NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10.7dB @VCC = 13.5V, PO = 3.5W, f = 175MHz ● TO-39 metal seeled package for high reliability. ● Em

流量变送器

Meet ROHS, Green Product.

文件：783.2 Kbytes Page：12 Pages

Meet ROHS, Green Product.

文件：782.76 Kbytes Page：12 Pages

Meet ROHS, Green Product.

文件：781.57 Kbytes Page：12 Pages

Meet ROHS, Green Product.

文件：767.16 Kbytes Page：12 Pages

Meet ROHS, Green Product.

文件：765.8 Kbytes Page：12 Pages

Meet RoHS, Green Product

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SMD LED

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UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation in the 900 MHz communications band. The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base. FEATURES • Emitter-ballasting resistors for an

Surface Mount Chip LEDs

Description The MSL-194B, a BLUE source Chip LED device, is designed in an indnstry standard package suitable for SMT assembly method. It utilizes InGaN on SiC LED chip technology and water clear epoxy package. Features Push-Button Backlighting LCD Backlighting Symbol Backlighting Front Pane

Surface Mount Chip LEDs

Description The MSL-194DR, a RED source Chip LED device, is designed in an indnstry standard package suitable for SMT assembly method. It utilizes AlGaAs on GaAs LED chip technology and water clear epoxy package. Features Push-Button Backlighting LCD Backlighting Symbol Backlighting Front Pa

Silicon NPN Transistor Audio Power Amplifier

Description: The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . .

LM194/LM394 Supermatch Pair

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