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C1815晶体管资料

  • C1815别名:C1815三极管、C1815晶体管、C1815晶体三极管

  • C1815生产厂家:中国大陆半导体企业

  • C1815制作材料

  • C1815性质:低频或音频放大 (LF)_宽频带放大 (A)

  • C1815封装形式:直插封装

  • C1815极限工作电压:60V

  • C1815最大电流允许值:0.15A

  • C1815最大工作频率:<1MHZ或未知

  • C1815引脚数:3

  • C1815最大耗散功率:0.4W

  • C1815放大倍数

  • C1815图片代号:A-11

  • C1815vtest:60

  • C1815htest:999900

  • C1815atest:0.15

  • C1815wtest:0.4

  • C1815代换 C1815用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:C1815;Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

丝印代码:C1815;Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (

TOSHIBA

东芝

丝印代码:C1815;Audio Frequency General Purpose Amplifier Applications

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

丝印代码:C1815;TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

丝印代码:C1815;Audio Frequency General Purpose Amplifier Applications

文件:279.37 Kbytes Page:4 Pages

TOSHIBA

东芝

丝印代码:C1815;Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications

文件:142.85 Kbytes Page:4 Pages

TOSHIBA

东芝

C1815

Audio Frequency Amplifier & High Frequency OSC

Features • Audio Frequency Amplifier and High-Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V

FAIRCHILD

仙童半导体

C1815

Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

C1815

Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (

TOSHIBA

东芝

C1815

AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR

FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * complimentary to 2SA1015

UTC

友顺

C1815

NPN EPITAXIAL PLANAR TRANSISTOR

Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.

HSMC

华昕

C1815

NPN Plastic-Encapsulate Transistors

WEITRON

C1815

NPN SILICON TRANSISTOR

MICRO-ELECTRONICS

C1815

NPN Plastic Encapsulated Transistor

FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V

SECOS

喜可士

C1815

丝印代码:HF;TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation

KOOCHIN

灏展电子

C1815

Power dissipation

TRANSISTOR (NPN) FEATURES ● Power dissipation

DGNJDZ

南晶电子

C1815

TO-92 Plastic-Encapsulate Transistors

FEATURES ® Power dissipation

DGNJDZ

南晶电子

C1815

TRANSISTOR (NPN)

文件:126.58 Kbytes Page:1 Pages

WINNERJOIN

永而佳

C1815

NPN Silicon Epitaxial Planar Transistor

文件:510.87 Kbytes Page:2 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

C1815

丝印代码:HF;Power dissipation

文件:450.71 Kbytes Page:3 Pages

GWSEMI

唯圣电子

C1815

SOT-23 Plastic-Encapsulate Transistors

文件:483.39 Kbytes Page:3 Pages

WILLAS

威伦电子

C1815

Plastic-Encapsulate Transistors

文件:193.53 Kbytes Page:2 Pages

HOTTECH

合科泰

C1815

丝印代码:HF;Plastic-Encapsulate Transistors

文件:568.74 Kbytes Page:2 Pages

SHENZHENSLS

三联盛

C1815

SOT-23 Plastic-Encapsulate Transistors

文件:2.18052 Mbytes Page:4 Pages

HDSEMI

海德半导体

C1815

NPN SILICON TRANSISTOR

文件:149.36 Kbytes Page:2 Pages

KISEMICONDUCTOR

C1815

Audio Frequency Amplifier & High Frequency OSC

ONSEMI

安森美半导体

C1815

TO-92 Plastic-Encapsulate Transistors

文件:687.28 Kbytes Page:1 Pages

DAYA

大亚电器

C1815

TRANSISTOR NPN

文件:1.07153 Mbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

C1815

TRANSISTOR (NPN)

文件:836.39 Kbytes Page:2 Pages

HTSEMI

金誉半导体

C1815

丝印代码:HF;SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

文件:455.86 Kbytes Page:2 Pages

RECTRON

丽正国际

TO-92 Plastic-Encapsulate Transistors

FEATURES ® Power dissipation

DGNJDZ

南晶电子

TRANSISTOR (NPN)

WEITRON

NPN Plastic Encapsulated Transistor

FEATURE Power Dissipation

SECOS

喜可士

NPN Plastic Encapsulated Transistor

文件:180.08 Kbytes Page:2 Pages

SECOS

喜可士

General Purpose transistors

文件:54.76 Kbytes Page:2 Pages

COMCHIP

典琦

NPN EPITAXIAL PLANAR TRANSISTOR

GTM

勤益投资控股

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications

文件:142.85 Kbytes Page:4 Pages

TOSHIBA

东芝

TRANSISTOR竊?NPN 竊

文件:131.23 Kbytes Page:2 Pages

JIANGSU

长电科技

贴片晶体管

DGNJDZ

南晶电子

TRANSISTOR竊?NPN 竊

文件:131.23 Kbytes Page:2 Pages

JIANGSU

长电科技

NPN Plastic Encapsulated Transistor

文件:399.45 Kbytes Page:2 Pages

SECOS

喜可士

Integrated Circuit Module, AF PO, 20W, Dual Power Supply

Features: • Small–Sized Package Allows Audio Sets to be made Slimmer • Facilitates Thermal Design of Slim Stereo Sets • Constant–Current Circuit Minimizes Pop Noise During Power ON/OFF • Possible to Design Electronic Supplementary Circuits: Pop Noise Muting During Power ON/OFF

NTE

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1815 is a switching device which can be driven directly by a 2.5-V power source. The µPA1815 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

NEC

瑞萨

Adaptive Variable Reluctance Sensor Amplifier

文件:133.86 Kbytes Page:6 Pages

NSC

国半

Adaptive Variable Reluctance Sensor Amplifier

文件:133.86 Kbytes Page:6 Pages

NSC

国半

Microwave Bipolar Power Amplifier

文件:51.87 Kbytes Page:4 Pages

MOTOROLA

摩托罗拉

更新时间:2026-3-14 12:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CJ
2011
SOT23
1003
全新原装 正品现货
UTC
22+
TO-92
20001
原装现货17377264928微信同号
TOSHIBA
24+
TO-92
8540
只做原装正品现货或订货假一赔十!
蓝箭
25+
SOT-23
33500
全新进口原装现货,假一罚十
TWGMC臺灣迪嘉
25+
SOT23
36000
TWGMC臺灣迪嘉原装现货2SC1815即刻询购立享优惠#长期有排单订
长电
23+
TO-92
20000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UTC/友顺
23+
TO-92
28650
主营品牌深圳百分百原装现货假一罚十绝对价优
CJ/长晶
25+
SOT23
157463
明嘉莱只做原装正品现货
TOS
24+
TO92
66500
只做原装进口现货
FSC
24+
TO-92
66500
郑重承诺只做原装进口现货

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    TPS6040x是一个系列器件产生一个不受管制的负输出电压的输入电压范围从1.6 V至5.5 V的设备通常提供了5 V或3.3 V由于preregulated供应铁路宽输入电压范围,两个或三个镍镉,镍氢电池或碱性电池,以及一个锂离子电池动力的。只有三个外部1μF电容需要构建一个完整的电荷泵DC / DC逆变器。组装在5引脚SOT23封装,完整的转换器,可以建在一个50平方毫米的电路板面积。额外的电路板面积元件数量的减少是通过取代肖特基二极管,通常需要启动成积体电路的负荷。TPS6040x能够以一个典型的转换效率,更大的一个最大输出电流60毫安在很宽的输出电流范围内超过90%。 3与20千赫,5

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