C1815晶体管资料
C1815别名:C1815三极管、C1815晶体管、C1815晶体三极管
C1815生产厂家:中国大陆半导体企业
C1815制作材料:
C1815性质:低频或音频放大 (LF)_宽频带放大 (A)
C1815封装形式:直插封装
C1815极限工作电压:60V
C1815最大电流允许值:0.15A
C1815最大工作频率:<1MHZ或未知
C1815引脚数:3
C1815最大耗散功率:0.4W
C1815放大倍数:
C1815图片代号:A-11
C1815vtest:60
C1815htest:999900
- C1815atest:0.15
C1815wtest:0.4
C1815代换 C1815用什么型号代替:
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
C1815 | SiliconNPNEpitaxailType(forAudioFrequencyGeneralPurposeAmplifierApplications) AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | ||
C1815 | AUDIOFREQUENCYAMPLIFIERHIGHFREQUENCYOSCNPNTRANSISTOR FEATURES *Collector-Emittervoltage:BVCEO=50V *Collectorcurrentupto150mA *HighhFElinearity *complimentaryto2SA1015 | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | ||
C1815 | AudioFrequencyAmplifier&HighFrequencyOSC Features •AudioFrequencyAmplifierandHigh-FrequencyOSC •ComplementtoKSA1015 •Collector-BaseVoltage:VCBO=50V | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
C1815 | NPNEPITAXIALPLANARTRANSISTOR Description TheHSC1815isdesignedforuseindriverstageofAFamplifiergeneralpurposeamplification. | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | ||
C1815 | NPNSILICONTRANSISTOR
| MICRO-ELECTRONICS Micro Electronics | ||
C1815 | NPNPlasticEncapsulatedTransistor FEATURES •PowerDissipation PCM:0.4W(Ta=25°C) •CollectorCurrent ICM:0.15A •Collector-BaseVoltage V(BR)CBO:60V | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | ||
C1815 | NPNPlastic-EncapsulateTransistors
| WEITRON Weitron Technology | ||
C1815 | Powerdissipation TRANSISTOR(NPN) FEATURES ●Powerdissipation | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
C1815 | TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES Powerdissipation | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | ||
C1815 | SiliconNPNEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent: VCEO=50V(min), IC=150mA(max) •ExcellenthFElinearity:hFE(2)=100(typ.) atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95( | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | ||
C1815 | TO-92Plastic-EncapsulateTransistors FEATURES ®Powerdissipation | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
C1815 | Powerdissipation 文件:450.71 Kbytes Page:3 Pages | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | ||
C1815 | NPNSiliconEpitaxialPlanarTransistor 文件:510.87 Kbytes Page:2 Pages | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | ||
C1815 | SOT-23Plastic-EncapsulateTransistors 文件:2.18052 Mbytes Page:4 Pages | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | ||
C1815 | SOT-23BIPOLARTRANSISTORSTRANSISTOR(NPN) 文件:455.86 Kbytes Page:2 Pages | RECTRON Rectron Semiconductor | ||
C1815 | TRANSISTOR(NPN) 文件:126.58 Kbytes Page:1 Pages | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | ||
C1815 | SOT-23Plastic-EncapsulateTransistors 文件:483.39 Kbytes Page:3 Pages | WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司 | ||
C1815 | TRANSISTOR(NPN) 文件:836.39 Kbytes Page:2 Pages | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | ||
C1815 | Plastic-EncapsulateTransistors 文件:568.74 Kbytes Page:2 Pages | SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD. 三联盛科技股份深圳市三联盛科技股份有限公司 | ||
C1815 | Plastic-EncapsulateTransistors 文件:193.53 Kbytes Page:2 Pages | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | ||
C1815 | NPNSILICONTRANSISTOR 文件:149.36 Kbytes Page:2 Pages | KISEMICONDUCTOR Kwang Myoung I.S. CO.,LTD | ||
C1815 | TO-92Plastic-EncapsulateTransistors 文件:687.28 Kbytes Page:1 Pages | DAYADaya Electric Group Co., Ltd. 大亚电器集团大亚电器集团有限公司 | ||
C1815 | TRANSISTORNPN 文件:1.07153 Mbytes Page:2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
TO-92Plastic-EncapsulateTransistors FEATURES ®Powerdissipation | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
TRANSISTOR(NPN)
| WEITRON Weitron Technology | |||
NPNPlasticEncapsulatedTransistor FEATURE PowerDissipation | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPNPlasticEncapsulatedTransistor 文件:180.08 Kbytes Page:2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
GeneralPurposetransistors 文件:54.76 Kbytes Page:2 Pages | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | |||
AudioFrequencyVoltageAmplifierApplicationsLowNoiseAmplifierApplications 文件:142.85 Kbytes Page:4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
TRANSISTOR竊?NPN竊 文件:131.23 Kbytes Page:2 Pages | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
TRANSISTOR竊?NPN竊 文件:131.23 Kbytes Page:2 Pages | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
NPNPlasticEncapsulatedTransistor 文件:399.45 Kbytes Page:2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPNgeneralpurposetransistor | ETC 知名厂家 | ETC | ||
AudioFrequencyAmplifier&HighFrequencyOSC Features •AudioFrequencyAmplifierandHigh-FrequencyOSC •ComplementtoKSA1015 •Collector-BaseVoltage:VCBO=50V | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
SiliconNPNEpitaxailType(forAudioFrequencyGeneralPurposeAmplifierApplications) AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioSnakeCable,4Pr#22StrTC,Ind.Shielded&Jacketed,PVDFJkt,CMP ProductDescription AudioSnakeCable,4Pair22AWG(7x30)TinnedCopper,FEPInsulation,IndividuallyFoilShieldedandPVDFJacketed,OverallPVDFJacket,Ripcord, CMP | BELDENBelden Inc. 百通电缆设计科技有限公司 | |||
AudioSnakeCable,4Pr#22StrTC,Ind.Shielded&Jacketed,O/AFoil,PVCJkt,CMR ProductDescription AudioSnakeCable,4Pair22AWG(7x30)TinnedCopper,PPInsulation,IndividuallyFoilShieldedandPVCJacketed,OverallBeldfoil®Shield,PVCJacket, Ripcord,CMR | BELDENBelden Inc. 百通电缆设计科技有限公司 |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
2223+ |
TO-92 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ST |
21+ |
TO-92 |
23480 |
||||
CJ/长电 |
24+ |
SOT-23 |
10000 |
全新原装现货库存 |
|||
矽润/长电 |
24+ |
SOT-23 |
681327 |
免费送样,支持月结.诚信 品质 未来 |
|||
CJ |
17+ |
SOT23 |
6200 |
100%原装正品现货 |
|||
CJ |
19+ |
SOT-23 |
20000 |
||||
CJ/长电 |
24+ |
TO92 |
19010 |
大批量供应优势库存热卖 |
|||
CJ |
21+ |
SOT23-3 |
1488 |
绝对有现货,不止网上数量!原装正品,假一赔十! |
|||
23+ |
17ROHS |
2502 |
原装正品--可开增值税发票量大可订货 |
||||
CJ |
2020+ |
SOT23 |
3000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
C1815规格书下载地址
C1815参数引脚图相关
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- C1888CT
- c188
- C1874
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- C185C
- C185B
- C185A
- C1846
- C1845
- C-182-K
- C-181-K
- C1815T
- C1815-G
- C180T
- C180S
- C180PM
- C180PD
- C180PC
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- C180N
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- C-180-K
- C180E
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- C1805
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- C1755
- C1740
- C1730
- C169
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- C155
- C1507
- C150
- C1473
- C1398
- C1383
- C1360
- C1-28
- C122M
- C122F
C1815数据表相关新闻
C1608X5R1E105K080AC
C1608X5R1E105K080AC
2022-2-10C19D903205P1375
C19D903205P1375OTHER20+标准封装 C8051F001SILICONLABS20+标准封装 C8051F023-GQSILICONLABS20+标准封装 CAT24C04WICATALYSTSEMICONDUCTOR20+标准封装 CAT24C08WI-GT3CATALYSTSEMICONDUCTOR20+标准封装 CAT28F010G-12(PROG)OTHER20+标准封装 CMCPCI102BRCALIFORNIAMICRODEVICES20+标准封装 CP
2021-6-5C1720J5003AHF定向耦合器
C1720J5003AHF定向耦合器
2021-3-23C1CB00002620
C1CB00002620,当天发货0755-82732291全新原装现货或门市自取.
2020-11-11C17AH,C18003,C18005(104-022-B),C1806,C1808DKNPOEBN6R0
C17AH,C18003,C18005(104-022-B),C1806,C1808DKNPOEBN6R0
2020-4-3C2012X5R1A225M-60毫安稳压电荷泵电压逆变器
TPS6040x是一个系列器件产生一个不受管制的负输出电压的输入电压范围从1.6V至5.5V的设备通常提供了5V或3.3V由于preregulated供应铁路宽输入电压范围,两个或三个镍镉,镍氢电池或碱性电池,以及一个锂离子电池动力的。只有三个外部1μF电容需要构建一个完整的电荷泵DC/DC逆变器。组装在5引脚SOT23封装,完整的转换器,可以建在一个50平方毫米的电路板面积。额外的电路板面积元件数量的减少是通过取代肖特基二极管,通常需要启动成积体电路的负荷。TPS6040x能够以一个典型的转换效率,更大的一个最大输出电流60毫安在很宽的输出电流范围内超过90%。3与20千赫,5
2012-12-28
DdatasheetPDF页码索引
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