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C17313

IESNA Type III (medium) beam with excellent back light control

文件:2.29138 Mbytes Page:5 Pages

LEDIL

N-Channel Enhancement Mode Power MOSFET

Description ACE17313B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general-purpose applications. Features ⚫ VDS=30V ⚫ ID=100A ⚫ RDS(ON)@VGS=10V, IDS=20A, TYP 3.5mΩ ⚫ RDS(ON)@VGS=4.5

ACE

N-Channel Enhancement Mode Power MOSFET

Description ACE17313B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general-purpose applications. Features ⚫ VDS=30V ⚫ ID=100A ⚫ RDS(ON)@VGS=10V, IDS=20A, TYP 3.5mΩ ⚫ RDS(ON)@VGS=4.5

ACE

Evaluation Kits

文件:9.95953 Mbytes Page:41 Pages

MAXIM

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