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C122晶体管资料
C122A别名:C122A三极管、C122A晶体管、C122A晶体三极管
C122A生产厂家:
C122A制作材料:50HZ-Thy
C122A性质:
C122A封装形式:直插封装
C122A极限工作电压:100V
C122A最大电流允许值:5A
C122A最大工作频率:<1MHZ或未知
C122A引脚数:3
C122A最大耗散功率:
C122A放大倍数:
C122A图片代号:B-10
C122Avtest:100
C122Ahtest:999900
- C122Aatest:5
C122Awtest:0
C122A代换 C122A用什么型号代替:BSTC1026M,CS6-02,TAG660-100,TIC116A,
C122价格
参考价格:¥8.7053
型号:C12207N21 品牌:Woodhead 备注:这里有C122多少钱,2025年最近7天走势,今日出价,今日竞价,C122批发/采购报价,C122行情走势销售排行榜,C122报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
C122 | 8-A Silicon Controlled Rectifiers 8-A Silicon Controlled Rectifiers For Power Switching, Power Control Features: ■ High dv/dt capability ■ Glass-passivated chip ■ Shorted-emitter gate-cathode construction ■ Low thermal resistance | SSDI | ||
C122 | 8A SILICON CONTROLLED RECTIFIERS 8A SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | ||
C122 | C122 SERIES C122 SERIES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
C122 | 8A SILICON CONTROLLED RECTIFIERS | DIGITRON | ||
Part Number Change Notification C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency | TDK 东电化 | |||
Part Number Change Notification C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency | TDK 东电化 | |||
Part Number Change Notification C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency | TDK 东电化 | |||
Part Number Change Notification C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency | TDK 东电化 | |||
Part Number Change Notification C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency | TDK 东电化 | |||
Part Number Change Notification C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency | TDK 东电化 | |||
Part Number Change Notification C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency | TDK 东电化 | |||
Part Number Change Notification C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency | TDK 东电化 | |||
Part Number Change Notification C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency | TDK 东电化 | |||
Part Number Change Notification C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency | TDK 东电化 | |||
Part Number Change Notification C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency | TDK 东电化 | |||
Part Number Change Notification C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency | TDK 东电化 | |||
Part Number Change Notification C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency | TDK 东电化 | |||
Part Number Change Notification C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency | TDK 东电化 | |||
Part Number Change Notification C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency | TDK 东电化 | |||
Part Number Change Notification C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency | TDK 东电化 | |||
CMOS 1.2um 100V CMOS, Double Metal - Double Poly CMOS 1.2µm 100V CMOS, Double Metal - Double Poly | IMPIMP, Inc 林屹微电子林屹微电子(宁波)有限公司 | |||
HV BiCMOS 1.2mm 30V Double Metal - Double Poly Coming Soon. If you have some information on related parts, please share useful information by adding links below. | IMPIMP, Inc 林屹微电子林屹微电子(宁波)有限公司 | |||
LOW NOISE DUAL PREAMPLIFIER SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
C122 SERIES C122 SERIES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
8A SILICON CONTROLLED RECTIFIERS 8A SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | |||
8-A Silicon Controlled Rectifiers 8-A Silicon Controlled Rectifiers For Power Switching, Power Control Features: ■ High dv/dt capability ■ Glass-passivated chip ■ Shorted-emitter gate-cathode construction ■ Low thermal resistance | SSDI | |||
SILICON CONTROLLED RECTIFIERS SCRs 8 AMPERES RMS 50 thru 800 VOLTS . . .designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. • Glass Passivated Junctions and Center Gate | Motorola 摩托罗拉 | |||
8A SILICON CONTROLLED RECTIFIERS 8A SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | |||
8-A Silicon Controlled Rectifiers 8-A Silicon Controlled Rectifiers For Power Switching, Power Control Features: ■ High dv/dt capability ■ Glass-passivated chip ■ Shorted-emitter gate-cathode construction ■ Low thermal resistance | SSDI | |||
C122 SERIES C122 SERIES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
SILICON CONTROLLED RECTIFIERS SCRs 8 AMPERES RMS 50 thru 800 VOLTS . . .designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. • Glass Passivated Junctions and Center Gate | Motorola 摩托罗拉 | |||
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 8 AMPERES RMS 50 thru 200 VOLTS Reverse Blocking Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features •Gla | ONSEMI 安森美半导体 | |||
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 8 AMPERES RMS 50 thru 200 VOLTS Reverse Blocking Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features •Gla | ONSEMI 安森美半导体 | |||
8A SILICON CONTROLLED RECTIFIERS 8A SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | |||
8-A Silicon Controlled Rectifiers 8-A Silicon Controlled Rectifiers For Power Switching, Power Control Features: ■ High dv/dt capability ■ Glass-passivated chip ■ Shorted-emitter gate-cathode construction ■ Low thermal resistance | SSDI | |||
C122 SERIES C122 SERIES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
8-A Silicon Controlled Rectifiers 8-A Silicon Controlled Rectifiers For Power Switching, Power Control Features: ■ High dv/dt capability ■ Glass-passivated chip ■ Shorted-emitter gate-cathode construction ■ Low thermal resistance | SSDI | |||
8A SILICON CONTROLLED RECTIFIERS 8A SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | |||
SILICON CONTROLLED RECTIFIERS SCRs 8 AMPERES RMS 50 thru 800 VOLTS . . .designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. • Glass Passivated Junctions and Center Gate | Motorola 摩托罗拉 | |||
8A SILICON CONTROLLED RECTIFIERS 8A SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | |||
8-A Silicon Controlled Rectifiers 8-A Silicon Controlled Rectifiers For Power Switching, Power Control Features: ■ High dv/dt capability ■ Glass-passivated chip ■ Shorted-emitter gate-cathode construction ■ Low thermal resistance | SSDI | |||
C122 SERIES C122 SERIES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
C122 SERIES C122 SERIES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
8A SILICON CONTROLLED RECTIFIERS 8A SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | |||
8-A Silicon Controlled Rectifiers 8-A Silicon Controlled Rectifiers For Power Switching, Power Control Features: ■ High dv/dt capability ■ Glass-passivated chip ■ Shorted-emitter gate-cathode construction ■ Low thermal resistance | SSDI | |||
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 8 AMPERES RMS 50 thru 200 VOLTS Reverse Blocking Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features •Gla | ONSEMI 安森美半导体 | |||
SILICON CONTROLLED RECTIFIERS SCRs 8 AMPERES RMS 50 thru 800 VOLTS . . .designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. • Glass Passivated Junctions and Center Gate | Motorola 摩托罗拉 | |||
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 8 AMPERES RMS 50 thru 200 VOLTS Reverse Blocking Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features •Gla | ONSEMI 安森美半导体 | |||
isc Thyristors FEATURES ·Small, Rugged, ThermowattConstruction for Low ThermalResistance, High HeatDissipation and Durability ·Blocking Voltage to 50 Volts APPLICATIONS · Switching applications | ISC 无锡固电 | |||
C122 SERIES C122 SERIES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
8A SILICON CONTROLLED RECTIFIERS 8A SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | |||
8-A Silicon Controlled Rectifiers 8-A Silicon Controlled Rectifiers For Power Switching, Power Control Features: ■ High dv/dt capability ■ Glass-passivated chip ■ Shorted-emitter gate-cathode construction ■ Low thermal resistance | SSDI | |||
SILICON CONTROLLED RECTIFIERS SCRs 8 AMPERES RMS 50 thru 800 VOLTS . . .designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. • Glass Passivated Junctions and Center Gate | Motorola 摩托罗拉 | |||
SILICON CONTROLLED RECTIFIERS SCRs 8 AMPERES RMS 50 thru 800 VOLTS . . .designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. • Glass Passivated Junctions and Center Gate | Motorola 摩托罗拉 | |||
C122 SERIES C122 SERIES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
X射线TDI相机 | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | |||
X-ray TDI Camera 文件:555.18 Kbytes Page:2 Pages | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | |||
Commercial Grade ( Low ESL Reverse Geometry ) 文件:140.39 Kbytes Page:1 Pages | TDK 东电化 | |||
封装/外壳:0508(1220 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:CAP CER 0.47UF 10V X5R 0508 电容器 陶瓷电容器 | TDK 东电化 | |||
封装/外壳:0508(1220 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:CAP CER 0.47UF 10V X5R 0508 电容器 陶瓷电容器 | TDK 东电化 |
C122产品属性
- 类型
描述
- 型号
C122
- 制造商
SPD
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/LITTELFUSE |
24+ |
TO-220 |
43200 |
郑重承诺只做原装进口现货 |
|||
APM |
2407+ |
14 |
30098 |
全新原装!仓库现货,大胆开价! |
|||
MOT |
24+ |
TO-220 |
5000 |
全新原装正品,现货销售 |
|||
TDK/东电化 |
23+ |
36840000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
24+ |
N/A |
75000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
NEC |
23+ |
DIP |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
TI/德州仪器 |
23+ |
LQFP-100 |
6500 |
专注配单,只做原装进口现货 |
|||
LED |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ON/LITTELFUSE |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
23+ |
SIP |
3200 |
专营高频管模块,全新原装! |
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C122规格书下载地址
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C122数据表相关新闻
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製造商: KEMET 產品類型: 多層陶瓷電容器MLCC - SMD/SMT RoHS: 詳細資料 終端: Standard 電容: 0.047 uF 直流電額定電壓: 50 VDC 電介質: X7R 耐受性: 20 %_ 外殼代碼 - in: 1206 外殼代碼 - mm: 3216 高度: 0.78 mm 最低工作溫度: - 55 C 最高工作溫度: + 125 C 產品: General Type MLCCs 終
2019-11-19
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