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C122晶体管资料
C122A别名:C122A三极管、C122A晶体管、C122A晶体三极管
C122A生产厂家:
C122A制作材料:50HZ-Thy
C122A性质:
C122A封装形式:直插封装
C122A极限工作电压:100V
C122A最大电流允许值:5A
C122A最大工作频率:<1MHZ或未知
C122A引脚数:3
C122A最大耗散功率:
C122A放大倍数:
C122A图片代号:B-10
C122Avtest:100
C122Ahtest:999900
- C122Aatest:5
C122Awtest:0
C122A代换 C122A用什么型号代替:BSTC1026M,CS6-02,TAG660-100,TIC116A,
C122价格
参考价格:¥8.7053
型号:C12207N21 品牌:Woodhead 备注:这里有C122多少钱,2025年最近7天走势,今日出价,今日竞价,C122批发/采购报价,C122行情走势销售排行榜,C122报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
C122 | 8-ASiliconControlledRectifiers 8-ASiliconControlledRectifiers ForPowerSwitching,PowerControl Features: ■Highdv/dtcapability ■Glass-passivatedchip ■Shorted-emittergate-cathodeconstruction ■Lowthermalresistance | SSDI Solid States Devices, Inc | ||
C122 | 8ASILICONCONTROLLEDRECTIFIERS 8ASILICONCONTROLLEDRECTIFIERS AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors | ||
C122 | C122SERIES C122SERIES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
PartNumberChangeNotification CSeriesGeneral(Upto50V) Features •Highcapacitancehasbeenachievedthroughprecisiontechnologies thatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthand reliability. •LowESLandexcellentfrequency | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
PartNumberChangeNotification CSeriesGeneral(Upto50V) Features •Highcapacitancehasbeenachievedthroughprecisiontechnologies thatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthand reliability. •LowESLandexcellentfrequency | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
PartNumberChangeNotification CSeriesGeneral(Upto50V) Features •Highcapacitancehasbeenachievedthroughprecisiontechnologies thatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthand reliability. •LowESLandexcellentfrequency | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
PartNumberChangeNotification CSeriesGeneral(Upto50V) Features •Highcapacitancehasbeenachievedthroughprecisiontechnologies thatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthand reliability. •LowESLandexcellentfrequency | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
PartNumberChangeNotification CSeriesGeneral(Upto50V) Features •Highcapacitancehasbeenachievedthroughprecisiontechnologies thatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthand reliability. •LowESLandexcellentfrequency | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
PartNumberChangeNotification CSeriesGeneral(Upto50V) Features •Highcapacitancehasbeenachievedthroughprecisiontechnologies thatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthand reliability. •LowESLandexcellentfrequency | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
PartNumberChangeNotification CSeriesGeneral(Upto50V) Features •Highcapacitancehasbeenachievedthroughprecisiontechnologies thatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthand reliability. •LowESLandexcellentfrequency | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
PartNumberChangeNotification CSeriesGeneral(Upto50V) Features •Highcapacitancehasbeenachievedthroughprecisiontechnologies thatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthand reliability. •LowESLandexcellentfrequency | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
PartNumberChangeNotification CSeriesGeneral(Upto50V) Features •Highcapacitancehasbeenachievedthroughprecisiontechnologies thatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthand reliability. •LowESLandexcellentfrequency | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
PartNumberChangeNotification CSeriesGeneral(Upto50V) Features •Highcapacitancehasbeenachievedthroughprecisiontechnologies thatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthand reliability. •LowESLandexcellentfrequency | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
PartNumberChangeNotification CSeriesGeneral(Upto50V) Features •Highcapacitancehasbeenachievedthroughprecisiontechnologies thatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthand reliability. •LowESLandexcellentfrequency | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
PartNumberChangeNotification CSeriesGeneral(Upto50V) Features •Highcapacitancehasbeenachievedthroughprecisiontechnologies thatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthand reliability. •LowESLandexcellentfrequency | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
PartNumberChangeNotification CSeriesGeneral(Upto50V) Features •Highcapacitancehasbeenachievedthroughprecisiontechnologies thatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthand reliability. •LowESLandexcellentfrequency | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
PartNumberChangeNotification CSeriesGeneral(Upto50V) Features •Highcapacitancehasbeenachievedthroughprecisiontechnologies thatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthand reliability. •LowESLandexcellentfrequency | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
PartNumberChangeNotification CSeriesGeneral(Upto50V) Features •Highcapacitancehasbeenachievedthroughprecisiontechnologies thatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthand reliability. •LowESLandexcellentfrequency | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
PartNumberChangeNotification CSeriesGeneral(Upto50V) Features •Highcapacitancehasbeenachievedthroughprecisiontechnologies thatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthand reliability. •LowESLandexcellentfrequency | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
CMOS1.2um100VCMOS,DoubleMetal-DoublePoly CMOS1.2µm100VCMOS,DoubleMetal-DoublePoly | IMP IMP, Inc | |||
HVBiCMOS1.2mm30VDoubleMetal-DoublePoly ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IMP IMP, Inc | |||
LOWNOISEDUALPREAMPLIFIER SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
C122SERIES C122SERIES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
8ASILICONCONTROLLEDRECTIFIERS 8ASILICONCONTROLLEDRECTIFIERS AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors | |||
8-ASiliconControlledRectifiers 8-ASiliconControlledRectifiers ForPowerSwitching,PowerControl Features: ■Highdv/dtcapability ■Glass-passivatedchip ■Shorted-emittergate-cathodeconstruction ■Lowthermalresistance | SSDI Solid States Devices, Inc | |||
SILICONCONTROLLEDRECTIFIERS SCRs8AMPERESRMS50thru800VOLTS ...designedprimarilyforfull-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf-wavesilicongate-controlled,solid-statedevicesareneeded. •GlassPassivatedJunctionsandCenterGate | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | |||
8ASILICONCONTROLLEDRECTIFIERS 8ASILICONCONTROLLEDRECTIFIERS AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors | |||
8-ASiliconControlledRectifiers 8-ASiliconControlledRectifiers ForPowerSwitching,PowerControl Features: ■Highdv/dtcapability ■Glass-passivatedchip ■Shorted-emittergate-cathodeconstruction ■Lowthermalresistance | SSDI Solid States Devices, Inc | |||
C122SERIES C122SERIES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SILICONCONTROLLEDRECTIFIERS SCRs8AMPERESRMS50thru800VOLTS ...designedprimarilyforfull-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf-wavesilicongate-controlled,solid-statedevicesareneeded. •GlassPassivatedJunctionsandCenterGate | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | |||
SiliconControlledRectifiersReverseBlockingThyristors SCRs8AMPERESRMS50thru200VOLTS ReverseBlockingThyristors Designedprimarilyforfull-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •Gla | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconControlledRectifiersReverseBlockingThyristors SCRs8AMPERESRMS50thru200VOLTS ReverseBlockingThyristors Designedprimarilyforfull-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •Gla | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
8ASILICONCONTROLLEDRECTIFIERS 8ASILICONCONTROLLEDRECTIFIERS AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors | |||
8-ASiliconControlledRectifiers 8-ASiliconControlledRectifiers ForPowerSwitching,PowerControl Features: ■Highdv/dtcapability ■Glass-passivatedchip ■Shorted-emittergate-cathodeconstruction ■Lowthermalresistance | SSDI Solid States Devices, Inc | |||
C122SERIES C122SERIES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
8ASILICONCONTROLLEDRECTIFIERS 8ASILICONCONTROLLEDRECTIFIERS AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors | |||
8-ASiliconControlledRectifiers 8-ASiliconControlledRectifiers ForPowerSwitching,PowerControl Features: ■Highdv/dtcapability ■Glass-passivatedchip ■Shorted-emittergate-cathodeconstruction ■Lowthermalresistance | SSDI Solid States Devices, Inc | |||
SILICONCONTROLLEDRECTIFIERS SCRs8AMPERESRMS50thru800VOLTS ...designedprimarilyforfull-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf-wavesilicongate-controlled,solid-statedevicesareneeded. •GlassPassivatedJunctionsandCenterGate | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | |||
8ASILICONCONTROLLEDRECTIFIERS 8ASILICONCONTROLLEDRECTIFIERS AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors | |||
8-ASiliconControlledRectifiers 8-ASiliconControlledRectifiers ForPowerSwitching,PowerControl Features: ■Highdv/dtcapability ■Glass-passivatedchip ■Shorted-emittergate-cathodeconstruction ■Lowthermalresistance | SSDI Solid States Devices, Inc | |||
C122SERIES C122SERIES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
C122SERIES C122SERIES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
8-ASiliconControlledRectifiers 8-ASiliconControlledRectifiers ForPowerSwitching,PowerControl Features: ■Highdv/dtcapability ■Glass-passivatedchip ■Shorted-emittergate-cathodeconstruction ■Lowthermalresistance | SSDI Solid States Devices, Inc | |||
8ASILICONCONTROLLEDRECTIFIERS 8ASILICONCONTROLLEDRECTIFIERS AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors | |||
SiliconControlledRectifiersReverseBlockingThyristors SCRs8AMPERESRMS50thru200VOLTS ReverseBlockingThyristors Designedprimarilyforfull-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •Gla | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SILICONCONTROLLEDRECTIFIERS SCRs8AMPERESRMS50thru800VOLTS ...designedprimarilyforfull-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf-wavesilicongate-controlled,solid-statedevicesareneeded. •GlassPassivatedJunctionsandCenterGate | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | |||
SiliconControlledRectifiersReverseBlockingThyristors SCRs8AMPERESRMS50thru200VOLTS ReverseBlockingThyristors Designedprimarilyforfull-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •Gla | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
8ASILICONCONTROLLEDRECTIFIERS 8ASILICONCONTROLLEDRECTIFIERS AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors | |||
8-ASiliconControlledRectifiers 8-ASiliconControlledRectifiers ForPowerSwitching,PowerControl Features: ■Highdv/dtcapability ■Glass-passivatedchip ■Shorted-emittergate-cathodeconstruction ■Lowthermalresistance | SSDI Solid States Devices, Inc | |||
C122SERIES C122SERIES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SILICONCONTROLLEDRECTIFIERS SCRs8AMPERESRMS50thru800VOLTS ...designedprimarilyforfull-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf-wavesilicongate-controlled,solid-statedevicesareneeded. •GlassPassivatedJunctionsandCenterGate | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | |||
SILICONCONTROLLEDRECTIFIERS SCRs8AMPERESRMS50thru800VOLTS ...designedprimarilyforfull-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf-wavesilicongate-controlled,solid-statedevicesareneeded. •GlassPassivatedJunctionsandCenterGate | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | |||
C122SERIES C122SERIES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
X-rayTDICamera 文件:555.18 Kbytes Page:2 Pages | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | |||
CommercialGrade(LowESLReverseGeometry) 文件:140.39 Kbytes Page:1 Pages | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
封装/外壳:0508(1220 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:CAP CER 0.47UF 10V X5R 0508 电容器 陶瓷电容器 | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
封装/外壳:0508(1220 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:CAP CER 0.47UF 10V X5R 0508 电容器 陶瓷电容器 | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
CommercialGrade(LowESLReverseGeometry) 文件:140.41 Kbytes Page:1 Pages | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
CommercialGrade(LowESLReverseGeometry) 文件:140.4 Kbytes Page:1 Pages | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 | |||
CommercialGrade(LowESLReverseGeometry) 文件:140.74 Kbytes Page:1 Pages | TDKTDK Corporation TDK株式会社东电化(中国)投资有限公司 |
C122产品属性
- 类型
描述
- 型号
C122
- 制造商
SPD
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/LITTELFUSE |
24+ |
NA/ |
7750 |
原装现货,当天可交货,原型号开票 |
|||
TDK |
24+ |
SMD |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ON/安森美 |
25+ |
TO-220 |
10 |
原装正品,假一罚十! |
|||
TDK/东电化 |
24+ |
CERAMIC |
990000 |
明嘉莱只做原装正品现货 |
|||
NEC |
23+ |
DIP |
9562 |
||||
TDK |
23+ |
NA |
190486 |
专做原装正品,假一罚百! |
|||
MOT |
24+ |
DIP |
600 |
||||
NEC |
23+ |
SIP |
3200 |
专营高频管模块,全新原装! |
|||
TDK |
22+ |
SMD |
98400 |
原装现货样品可售 |
|||
Motorola |
96 |
475 |
公司优势库存 热卖中!! |
C122规格书下载地址
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製造商:KEMET 產品類型:多層陶瓷電容器MLCC-SMD/SMT RoHS:詳細資料 終端:Standard 電容:0.047uF 直流電額定電壓:50VDC 電介質:X7R 耐受性:20%_ 外殼代碼-in:1206 外殼代碼-mm:3216 高度:0.78mm 最低工作溫度:-55C 最高工作溫度:+125C 產品:GeneralTypeMLCCs 終
2019-11-19
DdatasheetPDF页码索引
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