1.3W EPITAXIAL ZENER DIODE

FEATURES • Low profile package • Built-in strain relief • Low inductance • High temperature soldering : 260°C /10 seconds at terminals • Glass package has Underwriters Laboratory Flammability Classification • In compliance with EU RoHS 2002/95/EC directives

SILICON EPITAXIAL PLANAR TYPE

[DAIWA] Features: Verysharp reverse characteristic Low reverse current level Veryhigh stability Low noise Available with tighter tolerances

Silicon Epitaxial Planar Z-Diodes

Features ● Very sharp reverse characteristic ● Low reverse current level ● Available with tighter tolerances ● Very high stability ● Low noise ● VZ–tolerance ± 2 Applications    Voltage stabilization

Silicon Epitaxial Planar Z-Diodes

FEATURES • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • TZMC - VZ-tolerance ± 5 • TZMB - VZ-tolerance ± 2 • AEC-Q101 qualified

Silicon Epitaxial Planar Z-Diodes

文件：95.77 Kbytes Page：7 Pages

Silicon Epitaxial Planar Z-Diodes

文件：95.77 Kbytes Page：7 Pages

Silicon Epitaxial Planar Z-Diodes

文件：95.77 Kbytes Page：7 Pages