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BZW06-10价格
参考价格:¥0.5941
型号:BZW06-10 品牌:STMicroelectronics 备注:这里有BZW06-10多少钱,2025年最近7天走势,今日出价,今日竞价,BZW06-10批发/采购报价,BZW06-10行情走势销售排行榜,BZW06-10报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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BZW06-10 | UnidirectionalandbidirectionalTransientVoltageSuppressordiodes PulsePowerDissipation:600W MaximumStand-offvoltage:5,8...376V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V0 ●Forbidirectionaltypes(suffixB),electricalcharacteristicsapplyinbothdirections ●Thestandardtoleranceofthebreakdown | SemikronSemikron International 赛米控丹佛斯 | ||
BZW06-10 | TransientVoltageSuppressorDiodes Features ◇ULRecognizedFile#E-96005 ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇ExceedsenvironmentalstandardsofMIL-STD-19500 ◇600Wsurgecapabilityat10x100uswaveform,dutycycle:0.01 ◇Excellentclampingcapability ◇Lowzenerimpedance | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | ||
BZW06-10 | TRANSIENTVOLTAGESUPPRESSOR BREAKDOWNVOLTAGE:5.8---376V PEAKPULSEPOWER:600W FEATURES ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇Glasspassivatedjunction ◇600Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitionrate(dutycycle):0.01 ◇Excellentclamping | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | ||
BZW06-10 | TRANSIL Description Transildiodesprovidehighovervoltageprotectionbyclampingaction. TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ●600Wpeakpulsepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | ||
BZW06-10 | Unidirectionalandbidirectionaltypes Description Transildiodesprovidehighovervoltageprotectionbyclampingaction. TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ●600Wpeakpulsepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | ||
BZW06-10 | PEAKPULSEPOWER600W(10/1000ms) Description Transildiodesprovidehighovervoltageprotectionbyclampingaction. TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ●600Wpeakpulsepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | ||
BZW06-10 | TRANSIL Description Transildiodesprovidehighovervoltageprotectionbyclampingaction. TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ●600Wpeakpulsepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | ||
BZW06-10 | Voltageregulatordides FEATURES ■PEAKPULSEPOWER:400W(10/1000µs) ■STAND-OFFVOLTAGERANGE:From5.8Vto376V ■UNIANDBIDIRECTIONALTYPES ■LOWCLAMPINGFACTOR ■FASTRESPONSETIME ■ULRECOGNIZED | TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd 泰迪斯电子深圳市泰迪斯电子科技有限公司 | ||
BZW06-10 | TRANSIENTVOLTAGESUPPRESSOR 文件:227.5 Kbytes Page:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
BZW06-10 | 封装/外壳:DO-204AC,DO-15,轴向 包装:卷带(TR)剪切带(CT) 描述:TVS DIODE 10.2VWM 21.7VC DO15 电路保护 TVS - 二极管 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | ||
BZW06-10 | 600WattsAxialLeadedTransientVoltageSuppressors 文件:1.03256 Mbytes Page:3 Pages | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | ||
BZW06-10 | UnidirectionalandbidirectionalTransientVoltageSuppressorDiodes 文件:106.41 Kbytes Page:3 Pages | Diotec Diotec Semiconductor | ||
BZW06-10 | TransientVoltageSuppressorDiodes 文件:152.19 Kbytes Page:3 Pages | Diotec Diotec Semiconductor | ||
BZW06-10 | UnidirectionalandbidirectionalTransientVoltageSuppressordiodes 文件:155.09 Kbytes Page:3 Pages | SemikronSemikron International 赛米控丹佛斯 | ||
BZW06-10 | UnidirectionalandbidirectionalTransientVoltageSuppressorDiodes 文件:143.61 Kbytes Page:3 Pages | Diotec Diotec Semiconductor | ||
BZW06-10 | UnidirectionalandbidirectionalTransientVoltageSuppressorDiodes 文件:113.37 Kbytes Page:3 Pages | Diotec Diotec Semiconductor | ||
TransientVoltageSuppressorDiodes Features ◇ULRecognizedFile#E-96005 ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇ExceedsenvironmentalstandardsofMIL-STD-19500 ◇600Wsurgecapabilityat10x100uswaveform,dutycycle:0.01 ◇Excellentclampingcapability ◇Lowzenerimpedance | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | |||
UnidirectionalandbidirectionalTransientVoltageSuppressordiodes PulsePowerDissipation:600W MaximumStand-offvoltage:5,8...376V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V0 ●Forbidirectionaltypes(suffixB),electricalcharacteristicsapplyinbothdirections ●Thestandardtoleranceofthebreakdown | SemikronSemikron International 赛米控丹佛斯 | |||
TRANSIL Description Transildiodesprovidehighovervoltageprotectionbyclampingaction. TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ●600Wpeakpulsepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
TRANSIENTVOLTAGESUPPRESSOR BREAKDOWNVOLTAGE:5.8---376V PEAKPULSEPOWER:600W FEATURES ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇Glasspassivatedjunction ◇600Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitionrate(dutycycle):0.01 ◇Excellentclamping | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
TRANSIL Description Transildiodesprovidehighovervoltageprotectionbyclampingaction. TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ●600Wpeakpulsepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
PEAKPULSEPOWER600W(10/1000ms) Description Transildiodesprovidehighovervoltageprotectionbyclampingaction. TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ●600Wpeakpulsepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
Voltageregulatordides FEATURES ■PEAKPULSEPOWER:400W(10/1000µs) ■STAND-OFFVOLTAGERANGE:From5.8Vto376V ■UNIANDBIDIRECTIONALTYPES ■LOWCLAMPINGFACTOR ■FASTRESPONSETIME ■ULRECOGNIZED | TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd 泰迪斯电子深圳市泰迪斯电子科技有限公司 | |||
Unidirectionalandbidirectionaltypes Description Transildiodesprovidehighovervoltageprotectionbyclampingaction. TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ●600Wpeakpulsepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
600WattsTransientVoltageSuppressorDiodes 600WattsTransientVoltageSuppressorDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
600WattsTransientVoltageSuppressorDiodes 600WattsTransientVoltageSuppressorDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
Unidirectionalandbidirectionaltypes Description Transildiodesprovidehighovervoltageprotectionbyclampingaction. TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ●600Wpeakpulsepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
PEAKPULSEPOWER600W(10/1000ms) Description Transildiodesprovidehighovervoltageprotectionbyclampingaction. TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ●600Wpeakpulsepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
Voltageregulatordides FEATURES ■PEAKPULSEPOWER:400W(10/1000µs) ■STAND-OFFVOLTAGERANGE:From5.8Vto376V ■UNIANDBIDIRECTIONALTYPES ■LOWCLAMPINGFACTOR ■FASTRESPONSETIME ■ULRECOGNIZED | TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd 泰迪斯电子深圳市泰迪斯电子科技有限公司 | |||
AXIALLEADEDTRANSIENTVOLTAGESUPPERSSOR VOLTAGERANGE:5.8-376V POWER:600Watts Features ●GlassPassivatedDieConstruction ●ExcellentClampingCapability ●FastResponseTime ●PlasticCaseMaterialhasULFlammabilityClassificationRating94V-O | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
TRANSIENTVOLTAGESUPPRESSOR BREAKDOWNVOLTAGE:5.8---376V PEAKPULSEPOWER:600W FEATURES ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇Glasspassivatedjunction ◇600Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitionrate(dutycycle):0.01 ◇Excellentclamping | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
TRANSIL Description Transildiodesprovidehighovervoltageprotectionbyclampingaction. TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ●600Wpeakpulsepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
TRANSIL Description Transildiodesprovidehighovervoltageprotectionbyclampingaction. TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ●600Wpeakpulsepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
TransientVoltageSuppressorDiodes Features ◇ULRecognizedFile#E-96005 ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇ExceedsenvironmentalstandardsofMIL-STD-19500 ◇600Wsurgecapabilityat10x100uswaveform,dutycycle:0.01 ◇Excellentclampingcapability ◇Lowzenerimpedance | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | |||
BIDIRECTIONALTRANSIENTSUPPRESSOR FEATURES: *600Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree | EIC EIC discrete Semiconductors | |||
TransientVoltageSuppressorDiodes Features ◇ULRecognizedFile#E-96005 ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇ExceedsenvironmentalstandardsofMIL-STD-19500 ◇600Wsurgecapabilityat10x100uswaveform,dutycycle:0.01 ◇Excellentclampingcapability ◇Lowzenerimpedance | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | |||
BIDIRECTIONALTRANSIENTSUPPRESSOR FEATURES: *600Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree | EIC EIC discrete Semiconductors | |||
TRANSIENTVOLTAGESUPPRESSOR BREAKDOWNVOLTAGE:5.8---376V PEAKPULSEPOWER:600W FEATURES ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇Glasspassivatedjunction ◇600Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitionrate(dutycycle):0.01 ◇Excellentclamping | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
TRANSIL Description Transildiodesprovidehighovervoltageprotectionbyclampingaction. TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ●600Wpeakpulsepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
Voltageregulatordides FEATURES ■PEAKPULSEPOWER:400W(10/1000µs) ■STAND-OFFVOLTAGERANGE:From5.8Vto376V ■UNIANDBIDIRECTIONALTYPES ■LOWCLAMPINGFACTOR ■FASTRESPONSETIME ■ULRECOGNIZED | TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd 泰迪斯电子深圳市泰迪斯电子科技有限公司 | |||
TRANSIL Description Transildiodesprovidehighovervoltageprotectionbyclampingaction. TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ●600Wpeakpulsepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
PEAKPULSEPOWER600W(10/1000ms) Description Transildiodesprovidehighovervoltageprotectionbyclampingaction. TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ●600Wpeakpulsepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
AXIALLEADEDTRANSIENTVOLTAGESUPPERSSOR VOLTAGERANGE:5.8-376V POWER:600Watts Features ●GlassPassivatedDieConstruction ●ExcellentClampingCapability ●FastResponseTime ●PlasticCaseMaterialhasULFlammabilityClassificationRating94V-O | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
Unidirectionalandbidirectionaltypes Description Transildiodesprovidehighovervoltageprotectionbyclampingaction. TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ●600Wpeakpulsepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
PEAKPULSEPOWER600W(10/1000ms) Description Transildiodesprovidehighovervoltageprotectionbyclampingaction. TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ●600Wpeakpulsepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
600WattsTransientVoltageSuppressor 文件:277.31 Kbytes Page:6 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | |||
UnidirectionalandbidirectionalTransientVoltageSuppressorDiodes 文件:106.41 Kbytes Page:3 Pages | Diotec Diotec Semiconductor | |||
600W,13V-376VTransientVoltageSuppressor 文件:226.31 Kbytes Page:6 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | |||
TransientVoltageSuppressorDiodes 文件:152.19 Kbytes Page:3 Pages | Diotec Diotec Semiconductor | |||
UnidirectionalandbidirectionalTransientVoltageSuppressordiodes 文件:155.09 Kbytes Page:3 Pages | SemikronSemikron International 赛米控丹佛斯 | |||
600WattsTransientVoltageSuppressor 文件:550.16 Kbytes Page:4 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | |||
UnidirectionalandbidirectionalTransientVoltageSuppressorDiodes 文件:113.37 Kbytes Page:3 Pages | Diotec Diotec Semiconductor | |||
600WattsTransientVoltageSuppressorDiodes 文件:329.02 Kbytes Page:4 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | |||
UnidirectionalandbidirectionalTransientVoltageSuppressorDiodes 文件:143.61 Kbytes Page:3 Pages | Diotec Diotec Semiconductor | |||
TransientVoltageSuppressorDiodes 文件:152.19 Kbytes Page:3 Pages | Diotec Diotec Semiconductor | |||
600W,13V-376VTransientVoltageSuppressor 文件:226.31 Kbytes Page:6 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | |||
600WattsAxialLeadedTransientVoltageSuppressors 文件:1.03256 Mbytes Page:3 Pages | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
TransientVoltageSuppressorDiodes 文件:152.19 Kbytes Page:3 Pages | Diotec Diotec Semiconductor | |||
封装/外壳:DO-204AC,DO-15,轴向 包装:散装 描述:TVS DIODE 10.2VWM 21.7VC DO15 电路保护 TVS - 二极管 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
600WattsAxialLeadedTransientVoltageSuppressors 文件:1.03256 Mbytes Page:3 Pages | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 |
BZW06-10产品属性
- 类型
描述
- 型号
BZW06-10
- 功能描述
TVS 二极管 - 瞬态电压抑制器 600W 10V Unidirect
- RoHS
否
- 制造商
Vishay Semiconductors
- 极性
Bidirectional
- 击穿电压
58.9 V
- 钳位电压
77.4 V
- 峰值浪涌电流
38.8 A
- 封装/箱体
DO-214AB
- 最小工作温度
- 55 C
- 最大工作温度
+ 150 C
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法半导体 |
2022+ |
DO-204AC |
6900 |
原厂原装,假一罚十 |
|||
ST/意法半导体 |
DO-204AC |
6000 |
|||||
ST |
25+ |
DO-15 |
16900 |
原装,请咨询 |
|||
ST/意法半导体 |
24+ |
DO-204AC |
30000 |
原装正品公司现货,假一赔十! |
|||
ST/意法半导体 |
21+ |
DO-204AC |
8080 |
只做原装,质量保证 |
|||
STM |
24+ |
6000 |
|||||
ST |
2025+ |
DO-15 |
16000 |
原装优势绝对有货 |
|||
ST |
23+ |
DO-15 |
16900 |
正规渠道,只有原装! |
|||
STM |
1651+ |
Ammopack |
7500 |
只做原装进口,假一罚十 |
|||
ST |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
BZW06-10规格书下载地址
BZW06-10参数引脚图相关
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BZW06-10数据表相关新闻
BZV55C5V1
进口代理
2024-12-20BZX384-B27
BZX384-B27
2023-5-19BZV90-C5V1
BZV90-C5V1
2023-5-19BZX384-A5V1-QX 稳压二极管
BZX384-A5V1-QX稳压二极管BZX384-A5V1-Q/SOD323/SOD2
2023-4-25BZV85-C62 NXP/恩智浦 SOD66
BZV85-C62NXP/恩智浦SOD66只做原装正品现货!或订货假一赔十!
2021-3-23BZX384B12-HE3-08技术参数 BZX384B12-HE3-08稳压二极管
BZX384B12-HE3-08技术参数BZX384B12-HE3-08稳压二极管
2020-6-5
DdatasheetPDF页码索引
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