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型号 功能描述 生产厂家&企业 LOGO 操作
BZW04-10

TRANSZORB®TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresistance •Sold

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
BZW04-10

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •GlasspassivatedchipjunctioninDO-41package •400Wsurgecapabilityat1ms •Excellentclampingcapability •Lowzenerimpedance •Lowincrementalsurgeresistance •Excellentclampingcapability

MDEMDE semiconductor

MDE半导体MDE半导体公司

MDE
BZW04-10

TRANSIL

DESCRIPTION Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedIC’s. FEATURES ■PEAKPULSEPOWER:400W

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BZW04-10

TRANSIENTVOLTAGESUPPRESSOR

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W FEATURES ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellentclampingc

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
BZW04-10

400WattsTransientVoltageSuppressor

Features ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇ExceedsenvironmentalstandardsofMIL-STD-19500 ◇400Wsurgecapabilityat10x1000uswaveform ◇Excellentclampingcapability ◇Lowimpedancesurgeresistance ◇Veryfastresponsetime ◇TypicalI

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC
BZW04-10

TransientVoltageSuppressor

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellen

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
BZW04-10

Voltageregulatordides

FEATURES ■PEAKPULSEPOWER:400W(10/1000µs) ■STAND-OFFVOLTAGERANGE:From5.8Vto376V ■UNIANDBIDIRECTIONALTYPES ■LOWCLAMPINGFACTOR ■FASTRESPONSETIME ■ULRECOGNIZED

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

TAYCHIPST
BZW04-10

TransientVoltageSuppressor

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellen

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
BZW04-10

TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •400Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresist

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

TAYCHIPST
BZW04-10

PEAKPULSEPOWER:400W(10/1000ms)

DESCRIPTION Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedIC’s. FEATURES ■PEAKPULSEPOWER:400W

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BZW04-10

400WattsTransientVoltageSuppressorDiodes

Features ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇ExceedsenvironmentalstandardsofMIL-STD-19500 ◇400Wsurgecapabilityat10x1000uswaveform, ◇Excellentclampingcapability ◇Lowimpedancesurgeresistance ◇VeryfastresponsetimeV ◇Typic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BZW04-10

TRANSIL

DESCRIPTION Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedIC’s. FEATURES ■PEAKPULSEPOWER:400W

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BZW04-10

TRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:400Watts FEATURES: *400Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min) *TypicalIRlessthen1mAabove10V

EIC

EIC discrete Semiconductors

EIC
BZW04-10

TRANSZORB??TRANSIENTVOLTAGESUPPRESSOR

Stand-offVoltage-5.8to376VoltsPeakPulsePower-400Watts FEATURES ♦PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ♦Glasspassivatedchipjunction ♦400Wpeakpulsepowercapabilitywitha10/1000µswaveform, repetitionrate(dutycycle):0.0

GE

GE Industrial Company

GE
BZW04-10

UnidirectionalandbidirectionalTransientVoltageSuppressorDiodes

UnidirectionalandbidirectionalTransientVoltageSuppressorDiodes •Peakpulsepowerdissipation400W •NominalStand-offvoltage5.8...376V •PlasticcaseDO-15(DO-204AC) •Weightapprox

Diotec

Diotec Semiconductor

Diotec
BZW04-10

UnidirectionalandbidirectionalTransientVoltageSuppressordiodes

PulsePowerDissipation:400W MaximumStand-offvoltage:5,8...376V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V0 ●Forbidirectionaltypes(suffixB), electricalcharacteristicsapplyinbothdirections ●Thestandardtoleranceofthe brea

SemikronSemikron International

赛米控丹佛斯

Semikron
BZW04-10

MINITYPELEDLAMPS

文件：293.43 Kbytes Page：1 Pages

DBLECTRODB Lectro Inc

迪贝电子

DBLECTRO
BZW04-10

UnidirectionalandbidirectionalTransientVoltageSuppressorDiodes

文件：114.61 Kbytes Page：3 Pages

Diotec

Diotec Semiconductor

Diotec
BZW04-10

UnidirectionalandbidirectionalTransientVoltageSuppressorDiodes

文件：107.62 Kbytes Page：3 Pages

Diotec

Diotec Semiconductor

Diotec
BZW04-10

封装/外壳：DO-204AC，DO-15，轴向 包装：散装 描述：TVS DIODE 10.2VWM 16.7VC DO15 电路保护 TVS - 二极管

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BZW04-10

封装/外壳：DO-204AL，DO-41，轴向 包装：卷带（TR） 描述：TVS DIODE 10.2VWM 16.7VC DO204AL 电路保护 TVS - 二极管

Taiwan Semiconductor Corporation

Taiwan Semiconductor Corporation

Taiwan Semiconductor Corporation
BZW04-10

AXIALLEADEDTRANSIENTVOLTAGESUPPRESSORSDIODES

文件：509.04 Kbytes Page：4 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
BZW04-10

400WattsTransientVoltageSuppressor

文件：262.36 Kbytes Page：6 Pages

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC
BZW04-10

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

文件：200.66 Kbytes Page：4 Pages

MDEMDE semiconductor

MDE半导体MDE半导体公司

MDE
BZW04-10

TransientVoltageSuppressor

文件：209.54 Kbytes Page：6 Pages

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC
BZW04-10

TransZorbTransientVoltageSuppressors

文件：393.28 Kbytes Page：6 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
BZW04-10

UnidirectionalandbidirectionalTransientVoltageSuppressordiodes

文件：153.15 Kbytes Page：3 Pages

SemikronSemikron International

赛米控丹佛斯

Semikron
BZW04-102

400WattsTransientVoltageSuppressor

Features ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇ExceedsenvironmentalstandardsofMIL-STD-19500 ◇400Wsurgecapabilityat10x1000uswaveform ◇Excellentclampingcapability ◇Lowimpedancesurgeresistance ◇Veryfastresponsetime ◇TypicalI

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC
BZW04-102

TRANSZORB®TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresistance •Sold

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
BZW04-102

TRANSIL

DESCRIPTION Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedIC’s. FEATURES ■PEAKPULSEPOWER:400W

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BZW04-102

TransientVoltageSuppressor

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellen

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
BZW04-102

Voltageregulatordides

FEATURES ■PEAKPULSEPOWER:400W(10/1000µs) ■STAND-OFFVOLTAGERANGE:From5.8Vto376V ■UNIANDBIDIRECTIONALTYPES ■LOWCLAMPINGFACTOR ■FASTRESPONSETIME ■ULRECOGNIZED

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

TAYCHIPST
BZW04-102

TRANSIENTVOLTAGESUPPRESSOR

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W FEATURES ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellentclampingc

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
BZW04-102

UnidirectionalandbidirectionalTransientVoltageSuppressordiodes

PulsePowerDissipation:400W MaximumStand-offvoltage:5,8...376V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V0 ●Forbidirectionaltypes(suffixB), electricalcharacteristicsapplyinbothdirections ●Thestandardtoleranceofthe brea

SemikronSemikron International

赛米控丹佛斯

Semikron
BZW04-102

PEAKPULSEPOWER:400W(10/1000ms)

DESCRIPTION Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedIC’s. FEATURES ■PEAKPULSEPOWER:400W

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BZW04-102

TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •400Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresist

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

TAYCHIPST
BZW04-102

400WattsTransientVoltageSuppressorDiodes

Features ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇ExceedsenvironmentalstandardsofMIL-STD-19500 ◇400Wsurgecapabilityat10x1000uswaveform, ◇Excellentclampingcapability ◇Lowimpedancesurgeresistance ◇VeryfastresponsetimeV ◇Typic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BZW04-102

TRANSIL

DESCRIPTION Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedIC’s. FEATURES ■PEAKPULSEPOWER:400W

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BZW04-102

UnidirectionalandbidirectionalTransientVoltageSuppressorDiodes

UnidirectionalandbidirectionalTransientVoltageSuppressorDiodes •Peakpulsepowerdissipation400W •NominalStand-offvoltage5.8...376V •PlasticcaseDO-15(DO-204AC) •Weightapprox

Diotec

Diotec Semiconductor

Diotec
BZW04-102

TRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:400Watts FEATURES: *400Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min) *TypicalIRlessthen1mAabove10V

EIC

EIC discrete Semiconductors

EIC
BZW04-102

TRANSZORB??TRANSIENTVOLTAGESUPPRESSOR

Stand-offVoltage-5.8to376VoltsPeakPulsePower-400Watts FEATURES ♦PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ♦Glasspassivatedchipjunction ♦400Wpeakpulsepowercapabilitywitha10/1000µswaveform, repetitionrate(dutycycle):0.0

GE

GE Industrial Company

GE
BZW04-102B

TRANSIL

DESCRIPTION Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedIC’s. FEATURES ■PEAKPULSEPOWER:400W

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BZW04-102B

400WattsTransientVoltageSuppressorDiodes

Features ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇ExceedsenvironmentalstandardsofMIL-STD-19500 ◇400Wsurgecapabilityat10x1000uswaveform, ◇Excellentclampingcapability ◇Lowimpedancesurgeresistance ◇VeryfastresponsetimeV ◇Typic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BZW04-102B

TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •400Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresist

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

TAYCHIPST
BZW04-102B

Voltageregulatordides

FEATURES ■PEAKPULSEPOWER:400W(10/1000µs) ■STAND-OFFVOLTAGERANGE:From5.8Vto376V ■UNIANDBIDIRECTIONALTYPES ■LOWCLAMPINGFACTOR ■FASTRESPONSETIME ■ULRECOGNIZED

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

TAYCHIPST
BZW04-102B

TRANSIL

DESCRIPTION Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedIC’s. FEATURES ■PEAKPULSEPOWER:400W

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BZW04-102B

TRANSZORB®TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresistance •Sold

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
BZW04-102B

TRANSIENTVOLTAGESUPPRESSOR

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W FEATURES ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellentclampingc

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
BZW04-10B

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •GlasspassivatedchipjunctioninDO-41package •400Wsurgecapabilityat1ms •Excellentclampingcapability •Lowzenerimpedance •Lowincrementalsurgeresistance •Excellentclampingcapability

MDEMDE semiconductor

MDE半导体MDE半导体公司

MDE
BZW04-10B

TRANSZORB®TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresistance •Sold

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
BZW04-10B

TRANSIENTVOLTAGESUPPRESSOR

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W FEATURES ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellentclampingc

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
BZW04-10B

TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •400Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresist

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

TAYCHIPST
BZW04-10B

TRANSIL

DESCRIPTION Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedIC’s. FEATURES ■PEAKPULSEPOWER:400W

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BZW04-10B

TransientVoltageSuppressor

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellen

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
BZW04-10B

Voltageregulatordides

FEATURES ■PEAKPULSEPOWER:400W(10/1000µs) ■STAND-OFFVOLTAGERANGE:From5.8Vto376V ■UNIANDBIDIRECTIONALTYPES ■LOWCLAMPINGFACTOR ■FASTRESPONSETIME ■ULRECOGNIZED

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

TAYCHIPST
BZW04-10B

400WattsTransientVoltageSuppressorDiodes

Features ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇ExceedsenvironmentalstandardsofMIL-STD-19500 ◇400Wsurgecapabilityat10x1000uswaveform, ◇Excellentclampingcapability ◇Lowimpedancesurgeresistance ◇VeryfastresponsetimeV ◇Typic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BZW04-10B

TRANSIL

DESCRIPTION Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedIC’s. FEATURES ■PEAKPULSEPOWER:400W

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BZW04-10CA

400WattsAxialLeadedTransientVoltageSuppressor

VOLTAGERANGE:5.8-376VPOWER:400Watts Features ●ConstructedwithGlassPassivatedDie ●UniandBidirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticCaseMaterialhasULFlammabilityClassificationRating94V-O

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
BZW04-102

UnidirectionalandbidirectionalTransientVoltageSuppressorDiodes

文件：107.62 Kbytes Page：3 Pages

Diotec

Diotec Semiconductor

Diotec
BZW04-102

TransientVoltageSuppressor

文件：209.54 Kbytes Page：6 Pages

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

BZW04-10产品属性

  • 类型

    描述

  • 型号

    BZW04-10

  • 功能描述

    TVS 二极管 - 瞬态电压抑制器 400W 10V Unidirect

  • RoHS

    否

  • 制造商

    Vishay Semiconductors

  • 极性

    Bidirectional

  • 击穿电压

    58.9 V

  • 钳位电压

    77.4 V

  • 峰值浪涌电流

    38.8 A

  • 封装/箱体

    DO-214AB

  • 最小工作温度

    - 55 C

  • 最大工作温度

    + 150 C

BZW04-10供应商更多...

更新时间：2024-9-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
BZW04-10
Taiwan Semiconductor(台湾半导
23+
DO204AL(DO41)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市得捷芯城科技有限公司
BZW04-10TVS
ST/意法
23+
NA/
4250
原装现货,当天可交货,原型号开票
询价
深圳市弘扬芯城科技有限公司
BZW04-102BHR0G
Taiwan Semiconductor(台湾半导
23+
DO41(DO204AL)
6000
诚信服务，绝对原装原盘
询价
深圳市汇莱威科技有限公司
BZW04-10
ST
DO-15
68900
原包原标签100%进口原装常备现货!
询价
现代芯城（深圳）科技有限公司
BZW04-10
24+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择
询价
深圳市威尔健半导体有限公司
BZW04-10TVS二极管
ST/意法
23+
DO-15
50000
全新原装正品现货,支持订货
询价
深圳市特莱科技有限公司
BZW04-10
ST意法半导体
24+23+
DO-15
12580
16年现货库存供应商终端BOM表可配单提供样品
询价
北京天阳诚业科贸有限公司
BZW04-10B-E3/73
VISHAY
23+
NA
440
瞬态抑制二极管
询价
深圳市星佑电子有限公司
BZW04-102
FAG
05+
原厂原装
101
只做全新原装真实现货供应
询价
深圳廊盛科技有限公司
BZW04-10TVS二极管
ST/意法
2022
DO-15
80000
原装现货,OEM渠道,欢迎咨询
询价

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