General Purpose Rectifiers

Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High surge current capability • Typical IR less than 0.1 µA • Construction utilizes void-free molded plastic technique • 3.0 Ampere operation at TA = 55 °C with no thermal runaway • High temperature

General Purpose Plastic Rectifier

FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

General Purpose Plastic Rectifier

FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

General Purpose Plastic Rectifier

FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in gene

General Purpose Plastic Rectifier

FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in gene

General Purpose Plastic Rectifier

Low forward voltage drop\nLow leakage current, IR less than 0.1 µA\nHigh forward surge capability;

General Purpose Plastic Rectifier

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General Purpose Plastic Rectifier

FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

封装/外壳：DO-201AD，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 1.3KV 3A DO201AD 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-201AD，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 1.3KV 3A DO201AD 分立半导体产品 二极管 - 整流器 - 单

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

PNP video transistors

DESCRIPTION PNP video transistor in a SOT128B (TO-202) plastic package. NPN complements: BFQ235 and BFQ235A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability.

N-CHANNEL BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for large–signal, common source a

RF Power Field-Effect Transistor

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode

Silicon NPN Transistor Horizontal Driver, Amp

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