丝印代码：BY255G；General Purpose Rectifier BY251G Through BY255G

Features High efficiency High current capabilty High reliabity High surge current capability Low power oss Glass passivated chip junction Solder dip 275 °C max. 7 s, per JESD 22-8106

GLASS PASSIVATED SILICON RECTIFIER

FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High temperature soldering guaranteed: 250 °C/10 seconds,0.375”(9.5mm) le

GLASS PASSIVATED GENERAL PURPOSE RECTIFIERS

FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High temperature soldering guaranteed: 250 °C/10 seconds,0.375”(9.5mm) le

General Purpose Rectifier

■ Features ● Io 3A ● VRRM 200V-1300V ● High surge current capability ■ Applications ● Rectifier

GLASS PASSIVATED SILICON RECTIFIER

FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High temperature soldering guaranteed: 250 °C/10 seconds,0.375”(9.5mm) le

玻璃钝化普通整流二极管

整流二极管（贴片）

玻璃钝化普通整流管

Glass Passivated Junction Plastic Rectifier

FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for d

Glass Passivated Junction Plastic Rectifiers

Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Capable of meeting environmental standards of MIL-S-19500 • 3.0 Ampere operation at TA=55°C with no therm

Glass Passivated Junction Plastic Rectifier

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封装/外壳：DO-201AD，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 1.3KV 3A DO201AD 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-201AD，轴向 包装：卷带（TR） 描述：DIODE GEN PURP 1.3KV 3A DO201AD 分立半导体产品 二极管 - 整流器 - 单

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

PNP video transistors

DESCRIPTION PNP video transistor in a SOT128B (TO-202) plastic package. NPN complements: BFQ235 and BFQ235A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability.

N-CHANNEL BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for large–signal, common source a

RF Power Field-Effect Transistor

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode

Silicon NPN Transistor Horizontal Driver, Amp

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