Clamper/Damper Glass Passivated Rectifier

FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Typical IR less than 0.1 μA • High forward surge capability • Meets environmental standard MIL-S-19500 • Solder dip 275 °C max. 10 s, per JESD 22-B106 •

Clamper / Damper Glass Passivated Fast Plastic Rectifier

FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of

3.0A Axial Leaded Sintered Class Junction Plastic Rectifier

Features ● High temperature metallurgically bonded construction ● Sintered glass cavity free junction ● Capability of meeting environmental standard of MIL-S-19500 ● High temperature soldering guaranteed 350°C /10sec/0.375”lead length at 5 lbs tension ● Operate at Ta =55°C with no thermal run

SINTERED GLASS JUNCTION PLASTIC RECTIFIER VOLTAGE:1500V CURRENT: 3.0A

VOLTAGE:1500V CURRENT: 3.0A FEATURE ● High temperature metallurgically bonded construction ● Sintered glass cavity free junction ● Capability of meeting environmental standard of MIL-S-19500 ● High temperature soldering guaranteed 350°C /10sec/0.375”lead length at 5 lbs tension ● Operate at

Clamper/Damper Glass Passivated Fast Plastic Rectifier

分立 ·Superectifier structure for high reliability application\n·Cavity-free glass-passivated junction\n·Low forward voltage drop;

3A 1500V Fast recovery diode

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SINTERED GLASS JUNCTION PLASTIC RECTIFIER DIODES

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Standard Recovery

General rectifier diode 

Clamper / Damper Glass Passivated Fast Plastic Rectifier

FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of

封装/外壳：DO-201AD，轴向 包装：卷带（TR） 描述：DIODE GEN PURP 1.5KV 2.5A DO201 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-201AD，轴向 包装：卷带（TR） 描述：DIODE GEN PURP 1.5KV 2.5A DO201 分立半导体产品 二极管 - 整流器 - 单

Damper diode

Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.

Silicon Mesa Rectifier

FEATURES • Glass passivated junction • Hermetically sealed package • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High voltage rectification • Efficiency diode in horizontal deflection circuit 

Silicon NPN Transistor High Voltage Amp, Video Output

Description: The NTE228A is a silicon NPN transistor in a TO202M type package designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 350V (Min

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

Transistor array to drive the small motor

Silicon PNP epitaxial planar type (2 elements) Silicon NPN epitaxial planar type (2 elements) For motor drives ■ Features • Small and lightweight • Low power consumption • Low voltage drive • With 4 elements incorporated