封装/外壳：N 型直插式模块 包装：盒 描述：FXD ATTEN /N/20DB 100W ROHS RF/IF，射频/中频和 RFID 衰减器

20 dB Fixed Attenuator, DC - 6000 MHz, 50Ω

N-Type Fixed Attenuator

文件：191.99 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.57Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 640mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Polar Power MOSFET HiPerFET

文件：124.29 Kbytes Page：4 Pages

Polar Power MOSFET HiPerFET

文件：113.02 Kbytes Page：4 Pages