SIPMOS Power Transistor

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

3A, 400V, 1.800 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This

High Input Impedance

DESCRIPTION • 3A,400V • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max) • High Input Impedance • Majority Carrier Device APPLICATIONS • switching regulators, switching converters • motor drivers,relay drivers and drivers for high-power Bipo

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET

Trans MOSFET N-CH 400V 3A 3-Pin(3+Tab) TO-220AB

Transistor

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

• N channel • Enhancement mode • Avalanche-rated

2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This

SOA is Power Dissipation Limited

DESCRIPTION ·2.6A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Majority Carrier Device APPLICATIONS ·applications such as switching regulators, switching converters, motor drivers,relay driver

SIPMOS Power Transistor

• N channel • Enhancement mode • Avalanche-rated