8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This

SOA is Power Dissipation Limited

DESCRIPTION • Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) • SOA is Power Dissipation Limited APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching t

8.3A/ 500V/ 0.800 Ohm/ N-Channel Power MOSFET