SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated

SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS

NPN Silicon Darlington Power Transistor ​​​​​​​ TheBU323AP is a monolithic darlington transistor designedfor automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —VCER(sus)= 475 Vdc • 125 Watts Capability at 50 Volts • VCESat Specifie

AUTOPROTECTED DARLINGTON 10 AMPERES 360-450 VOLTS CLAMP 150 WATTS

NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50 Min • 10

3-Amp, 5-Volt Positive Regulator

文件：203.43 Kbytes Page：8 Pages

3-Amp, 5-Volt Positive Regulator

文件：203.43 Kbytes Page：8 Pages