isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -3.6A@ TC=25℃ ·Drain Source Voltage : VDSS= -200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor dri

SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

SIPMOS® Power Transistor • P channel • Enhancement mode • Avalanche rated

SIPMOS® Power Transistor

4-BIT D-TYPE REGISTERS WITH 3-STATE OUTPUTS

3-State Outputs Interface Directly With System Bus Gated Output-Control LInes for Enabling or Disabling the Outputs Fully Independent Clock Virtually Eliminates Restrictions for Operating in One of Two Modes: – Parallel Load – Do Nothing (Hold) For Application as Bus Buffer Registers Pac

RUGGED & LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Combination of Thin, Flexible

文件：659.91 Kbytes Page：2 Pages

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件：115.71 Kbytes Page：2 Pages

Temperature Sensors Line Guide

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