Low forward voltage drop

IGBT Preliminary data • High switching speed • Low tail current • Latch-up free • Avalanche rated • Low forward voltage drop     Remark: The TO-218 AB case doesnt solve the standards VDE 0110 and UL 508 for creeping distance

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

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封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT 1200V 32A 200W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

丝印代码：D213；DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT

This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for through–the–board moun

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

1024- 횞 512-pixel ccd image sensor

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