高压快速切换NPN功率晶体管

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown • Low spread of dynamic parameters \n• Minimum lot-to-lot spread for reliable operation \n• High voltage capability \n• Very high switching speed;

High voltage fast-switching

文件：316.85 Kbytes Page：12 Pages

High voltage fast-switching

文件：316.85 Kbytes Page：12 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 4A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

CMOS Low Voltage 2ohm SPST Switches in SC70 Packages

GENERAL DESCRIPTION The ADG741/ADG742 are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater tha

CMOS Low Voltage 2ohm SPST Switches in SC70 Packages

GENERAL DESCRIPTION The ADG741/ADG742 are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater tha

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process.

Integrated Circuit TV Sound Channel, 2W

Description: The NTE742 is designed for use as the entire sound function in television receivers or FM table radios. The NTE742 sound channel will directly drive a 16 ohm speaker with more than 2 watts output. This monolithic integrated circuit will operate from a single 18V to 28V power supply a

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re