型号 功能描述 生产厂家 企业 LOGO 操作
BULD1101ET4

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level d

STMICROELECTRONICS

意法半导体

BULD1101ET4

High voltage fast-switching NPN Power Transistor

Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level d

STMICROELECTRONICS

意法半导体

BULD1101ET4产品属性

  • 类型

    描述

  • 型号

    BULD1101ET4

  • 功能描述

    两极晶体管 - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2026-1-1 9:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+/25+
TO252
12500
原装正品现货库存价优
ST
2023+
TO-252
5800
进口原装,现货热卖
ST
24+
TO252
200000
原装进口正口,支持样品
ST
2018+
TO-252
26976
代理原装现货/特价热卖!
ST
26+
TO252
60000
只有原装 可配单
ST/意法
23+
SOT252
7000
ST/意法
22+
TO252DPAK
23697
ST
24+
TO252
16900
支持样品,原装现货,提供技术支持!
ST/意法
22+
SOT-252
100000
代理渠道/只做原装/可含税
ST/意法
24+
NA/
2500
优势代理渠道,原装正品,可全系列订货开增值税票

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