isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) • Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 0.8A APPLICATIONS • Designed for electronic lamp ballast circuits switch-mode power supplies applications.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

• Typical application (220V mains unless otherwise specified) • Integrated antisaturation and protection network • According to tube impedance 120V AC mains 277V AC mains 340V AC mains As PFC 220V AC mains Suffix D = Integrated free-wheeling diode ST preferred products in bol

封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN 400V 4A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High voltage fast-switching NPN power transistor

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高压快速切换NPN功率晶体管

High voltage fast-switching

Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level du

High voltage fast-switching NPN power transistor

文件：286.44 Kbytes Page：12 Pages

封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 400V 4A TO220FP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

GROMMETS , BUSHINGS

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Wiha Quality Tools Toll Free: (800) 494-6104

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Low maintenance Low power consumption Low Life

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Dura Torsion Insert and Power Bits

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TIME CLOCK CONTROL WITH FULLY PROGRAMMABLE CYCLE TIMES AND SALT AMOUNT

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