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BUL654

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUL654 is manufactured using high voltage Multi Epitaxial Planar technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ■

STMICROELECTRONICS

意法半导体

BUL654

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR

• HIGH VOLTAGE CAPABILITY\n• LOW BASE-DRIVE REQUIREMENTS\n• MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION• FULLY CHARACTERIZED AT 125°C\n• VERY HIGH SWITCHING SPEED;

STMICROELECTRONICS

意法半导体

BUL654

封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 400V 12A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

Low Cost Monolithic Voltage-to-Frequency Converter

PRODUCT DESCRIPTION The AD654 is a monolithic V/F converter consisting of an input amplifier, a precision oscillator system, and a high current output stage. A single RC network is all that is required to set up any full scale (FS) frequency up to 500 kHz and any FS input voltage up to ± 30 V.

AD

亚德诺

P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

FAIRCHILD

仙童半导体

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

FAIRCHILD

仙童半导体

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W Minimum Gain = 7.8 dB Efficiency = 55

MOTOROLA

摩托罗拉

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt

ZETEX

BUL654产品属性

  • 类型

    描述

  • Marketing Status:

    NRND

  • Grade:

    Industrial

  • Transistor Polarity:

    NPN

  • Collector-Emitter Voltage_max(V):

    400

  • Collector-Base Voltage_max(V):

    700

  • Collector Current_abs_max(A):

    12

  • Dc Current Gain_min:

    7

  • Test Condition for hFE (IC):

    6

  • Test Condition for hFE (VCE)_spec(V):

    2

  • VCE(sat)_max(V):

    0.7

  • Test Condition for VCE(sat) - IC:

    7

  • Test Condition for VCE(sat) - IB_spec(mA):

    1400

更新时间:2026-5-18 17:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法半导体
24+
TO-220-3
16900
原厂原装,价格优势,欢迎洽谈!
ST
25+
TO220
20000
原装,请咨询
ST
26+
TO220
60000
只有原装 可配单
ST/意法半导体
21+
TO-220-3
8860
只做原装,质量保证
ST/意法半导体
25+
TO-220-3
8000
全新、原装现货
ST
24+
TO220ABNONISOL
8866
ST(意法半导体)
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
ST(意法半导体)
25+
N/A
18746
样件支持,可原厂排单订货!
ST/意法半导体
24+
TO-220-3
10000
十年沉淀唯有原装
ST/意法半导体
25+
TO-220-3
12700
买原装认准中赛美

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