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BUL58晶体管资料
BUL58D别名：BUL58D三极管、BUL58D晶体管、BUL58D晶体三极管
BUL58D生产厂家：
BUL58D制作材料：Si-N+Di
BUL58D性质：开关管 （S）_功率放大 （L）
BUL58D封装形式：直插封装
BUL58D极限工作电压：850V
BUL58D最大电流允许值：8A
BUL58D最大工作频率：<1MHZ或未知
BUL58D引脚数：3
BUL58D最大耗散功率：85W
BUL58D放大倍数：
BUL58D图片代号：B-10
BUL58Dvtest：850
BUL58Dhtest：999900
- BUL58Datest：8
BUL58Dwtest：85
BUL58D代换 BUL58D用什么型号代替：BUF405(A),BUT12(A),BUT56(A),
BUL58价格
参考价格：￥2.4740
型号：BUL58D 品牌：STMICROELECTRONICS 备注：这里有BUL58多少钱，2025年最近7天走势，今日出价，今日竞价，BUL58批发/采购报价，BUL58行情走势销售排行榜，BUL58报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BUL58 | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 文件：22.98 Kbytes Page：2 Pages | SEME-LAB |   | |
BUL58 | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | TTELEC | | |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for impr | SEME-LAB | | ||
Bipolar NPN Device in a Hermetically sealed Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications Bipolar NPN Device. VCEO = 160V IC = 10A | SEME-LAB | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The BUL58D is manufactured using high voltage Multi Epitaxial Planar technology to enhance switching speeds while maintaining a wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ■ STMicroelectronics PREFERRED SALESTY | STMICROELECTRONICS 意法半导体 | | ||
Silicon NPN Power Transistor DESCRIPTION • High Voltage Capability • High Speed Switching • Integrated Antiparallel Collector-Emitter Diode APPLICATIONS • Electronic ballasts for fluorescent lighting • Electronic transformers for halogen lamps • Switch mode power supply | ISC 无锡固电 | | ||
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 文件：19.52 Kbytes Page：2 Pages | SEME-LAB | | ||
isc Silicon NPN Power Transistor 文件：193.98 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Bipolar Junction Transistors | TTELEC | | ||
Bipolar Junction Transistors | TTELEC | | ||
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 文件：22.98 Kbytes Page：2 Pages | SEME-LAB | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：213.25 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 450V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：213.25 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半导体 | |
BUL58产品属性
- 类型
描述
- 型号
BUL58
- 制造商
SEME-LAB
- 制造商全称
Seme LAB
- 功能描述
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
24+ |
N/A |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ST |
26+ |
TO-220 |
60000 |
只有原装 可配单 |
|||
ST/意法 |
2022+ |
5000 |
只做原装,价格优惠,长期供货。 |
||||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ST MICROELECTRONICS SEMI |
2023+ |
SMD |
1133 |
安罗世纪电子只做原装正品货 |
|||
ST/意法半导体 |
24+ |
TO-220-3 |
10000 |
十年沉淀唯有原装 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST/意法半导体 |
23+ |
TO-220-3 |
12700 |
买原装认准中赛美 |
|||
ST/意法 |
22+ |
TO220 |
8000 |
原装正品支持实单 |
|||
ST |
17+ |
TO-220 |
6200 |
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BUL58规格书下载地址
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DdatasheetPDF页码索引
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