BUL58晶体管资料
BUL58D别名：BUL58D三极管、BUL58D晶体管、BUL58D晶体三极管
BUL58D生产厂家：
BUL58D制作材料：Si-N+Di
BUL58D性质：开关管 （S）_功率放大 （L）
BUL58D封装形式：直插封装
BUL58D极限工作电压：850V
BUL58D最大电流允许值：8A
BUL58D最大工作频率：<1MHZ或未知
BUL58D引脚数：3
BUL58D最大耗散功率：85W
BUL58D放大倍数：
BUL58D图片代号：B-10
BUL58Dvtest：850
BUL58Dhtest：999900
- BUL58Datest：8
BUL58Dwtest：85
BUL58D代换 BUL58D用什么型号代替：BUF405(A),BUT12(A),BUT56(A),
BUL58价格
参考价格：￥2.4740
型号：BUL58D 品牌：STMICROELECTRONICS 备注：这里有BUL58多少钱，2026年最近7天走势，今日出价，今日竞价，BUL58批发/采购报价，BUL58行情走势销售排行榜，BUL58报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BUL58 | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 文件：22.98 Kbytes Page：2 Pages | SEME-LAB |   | |
BUL58 | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | TTELEC | | |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for impr | SEME-LAB | | ||
Bipolar NPN Device in a Hermetically sealed Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications Bipolar NPN Device. VCEO = 160V IC = 10A | SEME-LAB | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The BUL58D is manufactured using high voltage Multi Epitaxial Planar technology to enhance switching speeds while maintaining a wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ■ STMicroelectronics PREFERRED SALESTY | STMICROELECTRONICS 意法半导体 | | ||
Silicon NPN Power Transistor DESCRIPTION • High Voltage Capability • High Speed Switching • Integrated Antiparallel Collector-Emitter Diode APPLICATIONS • Electronic ballasts for fluorescent lighting • Electronic transformers for halogen lamps • Switch mode power supply | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistor 文件：193.98 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 文件：19.52 Kbytes Page：2 Pages | SEME-LAB | | ||
Bipolar Junction Transistors | TTELEC | | ||
Bipolar Junction Transistors | TTELEC | | ||
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 文件：22.98 Kbytes Page：2 Pages | SEME-LAB | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：213.25 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 450V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：213.25 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半导体 | |
BUL58产品属性
- 类型
描述
- Package：
TO-220AB
- Grade：
Industrial
- Transistor Polarity：
NPN
- Collector-Emitter Voltage_nom(V)：
450
- Collector-Emitter Voltage_max(V)：
450
- Collector-Base Voltage_max(V)：
800
- Collector Current_max(A)：
8
- Collector Current_abs_max(A)：
8
- Dc Current Gain_min：
5
- Test Condition for hFE (IC)：
5
- Test Condition for hFE (VCE)_spec(V)：
5
- VCE(sat)_max(V)：
1.5
- Test Condition for VCE(sat) - IC：
4
- Test Condition for VCE(sat) - IB_spec(mA)：
800
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
STMicroelectronics |
25+ |
N/A |
18746 |
样件支持,可原厂排单订货! |
|||
ON |
23+ |
SOD523 |
12000 |
全新原装假一赔十 |
|||
ST |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ST/意法 |
2026+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ST/意法 |
25+ |
原装 |
32360 |
ST/意法全新特价BUL58D即刻询购立享优惠#长期有货 |
|||
STM |
24+ |
N/A |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ST |
23+ |
TO-220 |
20000 |
专做原装正品,假一罚百! |
|||
STMRC |
24+ |
TO-220 |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
STMicroelectronics |
24+ |
NA |
3554 |
进口原装正品优势供应 |
BUL58规格书下载地址
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