HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

• Typical application (220V mains unless otherwise specified) • Integrated antisaturation and protection network • According to tube impedance 120V AC mains 277V AC mains 340V AC mains As PFC 220V AC mains Suffix D = Integrated free-wheeling diode ST preferred products in bol

高压快速切换NPN功率晶体管

The BUL138 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds.\n\n The BUL series is designed for use in lighting applications and lo • FULLY CHARACTERIZED AT 125oC \n• VERY HIGH SWITCHING SPEED \n• STMicroelectronics PREFERRED SALESTYPE \n• HIGH VOLTAGE CAPABILITY \n• NPN TRANSISTOR \n• MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION \n• LOW SPREAD OF DYNAMIC PARAMETERS;

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 5A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：266.2 Kbytes Page：6 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUL138FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds. The BUL series is designed for use in lighting applic

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：266.2 Kbytes Page：6 Pages

封装/外壳：TO-220-3 整包 包装：卷带（TR） 描述：TRANS NPN 400V 5A TO220FP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava