isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

PowerMOS transistor Isolated version of BUK454-200A/B

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The deviceis intended foruse inSwitched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

PowerMOS transistor Isolated version of BUK454-200A/B

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The deviceis intended foruse inSwitched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 400V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 500V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 600V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applic

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 800V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 800V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

PowerMOS transistor Isolated version of BUK454-200A/B

文件：79.98 Kbytes Page：7 Pages

PowerMOS transistor Isolated version of BUK454-200A/B

PowerMOS transistor Isolated version of BUK454-200A/B

文件：79.98 Kbytes Page：7 Pages

PowerMOS transistor

Linear Output Type OPIC Light Detector

Features 1. Linear output conforming to illuminance (50 lx to 50000 lx) 2. Conforming to required visual sensitivity characteristics by means of built-in filter Peak sensitivity wavelength : TYP. 550 nm 3. Not dependent on kind of light source such as incandescent lamp and fluorescent lam

SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR 400MHz~520MHz RANGE)

SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR 400MHz~520MHz RANGE)

SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR 400MHz~520MHz RANGE)

SHARP BREAKDOWN, LOW LEAKAGE LVA REGULATOR DIODES

SHARP BREAKDOWN, LOW LEAKAGE LVA REGULATOR DIODES • Sharper breakdown voltage • Lower leakage current characteristics in the 5 – 9 volt range