位置:首页 > IC中文资料第5750页 > BUK444
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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BUK444 | PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. | Philips 飞利浦 | ||
PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. | Philips 飞利浦 | |||
PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. | Philips 飞利浦 | |||
PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. | Philips 飞利浦 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 400V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 500V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 500V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw | ISC 无锡固电 | |||
PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching a | Philips 飞利浦 | |||
PowerMOS transistor PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switch | Philips 飞利浦 | |||
PowerMOS transistor PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switch | Philips 飞利浦 | |||
PowerMOS transistor PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switch | Philips 飞利浦 | |||
PowerMOS transistor 文件:59.81 Kbytes Page:7 Pages | Philips 飞利浦 | |||
PowerMOS transistor 文件:59.81 Kbytes Page:7 Pages | Philips 飞利浦 | |||
SOA is Power Dissipation Limited 文件:67.16 Kbytes Page:2 Pages | ISC 无锡固电 | |||
PowerMOS transistor 文件:52.95 Kbytes Page:7 Pages | Philips 飞利浦 | |||
PowerMOS transistor 文件:52.95 Kbytes Page:7 Pages | Philips 飞利浦 | |||
SOA is Power Dissipation Limited 文件:67.17 Kbytes Page:2 Pages | ISC 无锡固电 | |||
SCHOTTKY RECTIFIER 125℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals | SMCDIODE 桑德斯微电子 | |||
Sanding 文件:76.71 Kbytes Page:1 Pages | DREMEL 琢美 | |||
Sanding 文件:76.71 Kbytes Page:1 Pages | DREMEL 琢美 | |||
Double Coated Tapes with Adhesive 300 文件:56 Kbytes Page:4 Pages | 3M | |||
Guard ring for enhanced ruggedness and long term reliability 文件:200.84 Kbytes Page:4 Pages | SMCSangdest Microelectronic (Nanjing) Co., Ltd 烧结金属 |
BUK444产品属性
- 类型
描述
- 型号
BUK444
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
PowerMOS transistor
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
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PH |
24+ |
TO92 |
6000 |
公司现货库存,支持实单 |
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PHI |
24+ |
NA/ |
95 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
PHI |
25+ |
TO-220 |
95 |
原装正品,假一罚十! |
|||
VBsemi |
21+ |
TO220F |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PH |
24+ |
TO-220 |
6000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
ST |
18+ |
TO220 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
|||
11+ |
9826 |
||||||
PH |
24+ |
TO-220F |
370 |
||||
VBsemi |
24+ |
TO220F |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
PH/ST |
2023+ |
TO-220 |
8700 |
原装现货 |
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BUK444规格书下载地址
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2012-11-14
DdatasheetPDF页码索引
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