位置：首页 > IC中文资料第5750页 > BUK444
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BUK444 | PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. | Philips 飞利浦 |   | |
PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. | Philips 飞利浦 | | ||
PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. | Philips 飞利浦 | | ||
PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. | Philips 飞利浦 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 400V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 500V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 500V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw | ISC 无锡固电 | | ||
PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching a | Philips 飞利浦 | | ||
PowerMOS transistor PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switch | Philips 飞利浦 | | ||
PowerMOS transistor PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switch | Philips 飞利浦 | | ||
PowerMOS transistor PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switch | Philips 飞利浦 | | ||
PowerMOS transistor 文件：59.81 Kbytes Page：7 Pages | Philips 飞利浦 | | ||
PowerMOS transistor 文件：59.81 Kbytes Page：7 Pages | Philips 飞利浦 | | ||
SOA is Power Dissipation Limited 文件：67.16 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
PowerMOS transistor | ETC 知名厂家 | ETC | | |
PowerMOS transistor | ETC 知名厂家 | ETC | | |
PowerMOS transistor 文件：52.95 Kbytes Page：7 Pages | Philips 飞利浦 | | ||
PowerMOS transistor 文件：52.95 Kbytes Page：7 Pages | Philips 飞利浦 | | ||
PowerMOS transistor | ETC 知名厂家 | ETC | | |
SOA is Power Dissipation Limited 文件：67.17 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SCHOTTKY RECTIFIER 125℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals | SMCDIODE 桑德斯微电子 | | ||
Sanding 文件：76.71 Kbytes Page：1 Pages | DREMEL 琢美 | | ||
Sanding 文件：76.71 Kbytes Page：1 Pages | DREMEL 琢美 | | ||
Double Coated Tapes with Adhesive 300 文件：56 Kbytes Page：4 Pages | 3M | | ||
Guard ring for enhanced ruggedness and long term reliability 文件：200.84 Kbytes Page：4 Pages | SMC 桑德斯微电子 | |
BUK444产品属性
- 类型
描述
- 型号
BUK444
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
PowerMOS transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
25+ |
TO-TO-220 |
35400 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VBsemi |
24+ |
TO220F |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
VBsemi |
21+ |
TO220F |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PHI |
23+ |
21368 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
PHI |
2447 |
TO-220F |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VBSEMI/台湾微碧 |
23+ |
TO220F |
50000 |
全新原装正品现货,支持订货 |
|||
PH |
24+ |
TO-220F |
370 |
||||
11+ |
9826 |
||||||
ST |
18+ |
TO220 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
|||
PHI |
24+ |
TO-220 |
5000 |
全现原装公司现货 |
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BUK444规格书下载地址
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2012-11-14
DdatasheetPDF页码索引
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