Silicon NPN High Voltage Switching Transistor

Features ● Simple-sWitch-Off Transistor (SWOT) ● HIGH SPEED technology ● Planar passivation ● 100 kHz switching rate ● Very low switching losses ● Very low dynamic saturation ● Very low operating temperature ● Optimized RBSOA ● High reverse voltage Applications Electronic lamp ballas

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 400V(Min) · Collector-Emitter Saturation Voltage -VCE(sat) :0.2V(Max) @IC=2A APPLICATIONS · Electronic lamp ballast circuits · Switch-mode power supplies

硅NPN高电压开关晶体管

Low Cost Monolithic Voltage-to-Frequency Converter

PRODUCT DESCRIPTION The AD654 is a monolithic V/F converter consisting of an input amplifier, a precision oscillator system, and a high current output stage. A single RC network is all that is required to set up any full scale (FS) frequency up to 500 kHz and any FS input voltage up to ± 30 V.

P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W Minimum Gain = 7.8 dB Efficiency = 55

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt