BUF16821价格
参考价格:¥16.0083
型号:BUF16821AIPWPR 品牌:TI 备注:这里有BUF16821多少钱,2026年最近7天走势,今日出价,今日竞价,BUF16821批发/采购报价,BUF16821行情走势销售排行榜,BUF16821报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码:BUF16821;Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA | TI 德州仪器 | |||
丝印代码:BUF16821;Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA | TI 德州仪器 | |||
BUF16821 | Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA | TI 德州仪器 | ||
BUF16821 | Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 1FEATURES 234• 10-BIT RESOLUTION • 8-CHANNEL P-GAMMA • 1-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT: 300mV Minimum Swing-to-Rail (10mA) > 300mA Maximum IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DI | TI 德州仪器 | ||
BUF16821 | Programmable Gamma-Voltage Generator and High Slew Rate VCOM with Integrated Two-Bank Memory 1FEATURES 23• 10-BIT RESOLUTION • 8-CHANNEL P-GAMMA • 1-CHANNEL P-VCOM • HIGH SLEW RATE V COM: 45V/μs • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY | TI 德州仪器 | ||
BUF16821 | BUF16821-Q1 Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 1 Features 1• AEC-Q100 Qualified with: – Temperature Grade 3: –40°C to 85°C – HBM ESD Classification 2 – CDM ESD Classification C4B • 16-Channel P-Gamma, 2-Channel P-VCOM, 10- Bit Resolution • 16x Rewritable Nonvolatile Memory • Two Independent Pin-Selectable Memory Banks • Rail-to-Rail O | TI 德州仪器 | ||
BUF16821 | Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory DESCRIPTION The BUF16821 offers 16 programmable gamma channels and two programmable VCOM channels. The final gamma and VCOM values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the BUF16821 supports up to 16 write | EPCOS 爱普科斯 | ||
BUF16821 | 具有集成双列存储器的 16 通道伽玛电压发生器和 Vcom 校准器 The BUF16821 offers 16 programmable gamma channels and two programmable VCOM channels. The final gamma and VCOM values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the BUF16821 supports up to 16 write operations to th • 10-BIT RESOLUTION\n• 2-CHANNEL P-VCOM\n• TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS\n• 300mV Min Swing-to-Rail (10mA)\n• LOW SUPPLY CURRENT\n• DIGITAL SUPPLY: 2V to 5.5V\n• APPLICATIONS \n• TFT-LCD REFERENCE DRIVERS\n \n PowerPAD is a trademark of Texas Instruments. I2C is a trademark of NXP Sem; | TI 德州仪器 | ||
BUF16821 | Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 文件:826.78 Kbytes Page:29 Pages | TI 德州仪器 | ||
BUF16821 | Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 文件:813.43 Kbytes Page:30 Pages | TI 德州仪器 | ||
BUF16821 | Programmable Gamma-Voltage Generator and High Slew Rate VCOM with Integrated Two-Bank Memory 文件:1.08774 Mbytes Page:31 Pages | TI 德州仪器 | ||
BUF16821 | Programmable Gamma-Voltage Generator 文件:1.12903 Mbytes Page:38 Pages | TI 德州仪器 | ||
BUF16821 | Programmable Gamma-Voltage Generator and High Slew Rate VCOM 文件:1.19689 Mbytes Page:35 Pages | TI 德州仪器 | ||
丝印代码:BUF16821B;Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA | TI 德州仪器 | |||
丝印代码:BUF16821B;Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA | TI 德州仪器 | |||
Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA | TI 德州仪器 | |||
丝印代码:B16821Q1;BUF16821-Q1 Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 1 Features 1• AEC-Q100 Qualified with: – Temperature Grade 3: –40°C to 85°C – HBM ESD Classification 2 – CDM ESD Classification C4B • 16-Channel P-Gamma, 2-Channel P-VCOM, 10- Bit Resolution • 16x Rewritable Nonvolatile Memory • Two Independent Pin-Selectable Memory Banks • Rail-to-Rail O | TI 德州仪器 | |||
丝印代码:B16821Q1;BUF16821-Q1 Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 1 Features 1• AEC-Q100 Qualified with: – Temperature Grade 3: –40°C to 85°C – HBM ESD Classification 2 – CDM ESD Classification C4B • 16-Channel P-Gamma, 2-Channel P-VCOM, 10- Bit Resolution • 16x Rewritable Nonvolatile Memory • Two Independent Pin-Selectable Memory Banks • Rail-to-Rail O | TI 德州仪器 | |||
Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA | TI 德州仪器 | |||
Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA | TI 德州仪器 | |||
具有集成双列存储器的汽车类、16 通道伽玛电压发生器和 Vcom 校准器 BUF16821-Q1 提供 16 条可编程伽马通道,以及两个可编程 VCOM 通道。 最终的伽马和 VCOM 值可被存储在片上、非易失性存储器中。为了应对编程错误时或使液晶显示屏 (LCD) 面板重新开始工作,此器件支持多达 16 个对片上存储器的写操作。 此器件具有两个独立的存储器组,可实现两个不同伽马曲线的同时存储,从而使伽马曲线之间的切换更加便捷。 所有伽马和 VCOM 通道提供一个轨到轨输出,此输出在10mA 负载时,通常在任一电源轨的 150mV 内摆动。 可使用一个 I2C 接口对所有通道进行编程,这个接口支持高达 400kHz的标准运行,以及高达 2.7MHz 的高速数据传输。 • 具有符合 AEC-Q100 标准的以下结果: \n• 温度等级 3:-40°C 至 85°C\n• 人体模型 (HBM) 静电放电 (ESD) 分类等级 2\n• 充电器件模型 (CDM) ESD 分类等级 C4B\n \n• 16 通道 P 伽马,2 通道 P-VCOM,10 位分辨率\n• 16x 可重写非易失性存储器\n• 两个独立的引脚可选存储器组\n• 轨至轨输出: \n• 300mV(最小值)电源轨摆幅 (10mA)\n• > 300mA(最大值)IOUT \n \n• 电源电压:9V 至 20V\n• 数字电源:2V 至 5.5V\n• I2C 接口:支持 400kHz 和 ; | TI 德州仪器 | |||
BUF16821-Q1 Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 1 Features 1• AEC-Q100 Qualified with: – Temperature Grade 3: –40°C to 85°C – HBM ESD Classification 2 – CDM ESD Classification C4B • 16-Channel P-Gamma, 2-Channel P-VCOM, 10- Bit Resolution • 16x Rewritable Nonvolatile Memory • Two Independent Pin-Selectable Memory Banks • Rail-to-Rail O | TI 德州仪器 | |||
Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 文件:813.43 Kbytes Page:30 Pages | TI 德州仪器 | |||
Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 文件:813.43 Kbytes Page:30 Pages | TI 德州仪器 | |||
Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 文件:813.43 Kbytes Page:30 Pages | TI 德州仪器 | |||
Programmable Gamma-Voltage Generator 文件:1.12903 Mbytes Page:38 Pages | TI 德州仪器 | |||
Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 文件:813.43 Kbytes Page:30 Pages | TI 德州仪器 | |||
Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory 文件:813.43 Kbytes Page:30 Pages | TI 德州仪器 | |||
功能:视频处理 包装:盒 描述:EVALUATION MODULE FOR BUF16821 开发板,套件,编程器 评估和演示板及套件 | TI 德州仪器 | |||
功能:视频处理 包装:散装 描述:EVAL MODULE USB FOR BUF16821 开发板,套件,编程器 评估和演示板及套件 | TI 德州仪器 | |||
Programmable Gamma-Voltage Generator 文件:1.12903 Mbytes Page:38 Pages | TI 德州仪器 | |||
20-bit bus-interface D-type flip-flop; positive-edge trigger 3-State DESCRIPTION The 74ALVCH16821 has two 10-bit, edge triggered registers, with each register coupled to a 3-State output buffer. The two sections of each register are controlled independently by the clock (nCP) and Output Enable (nOE) control gates. FEATURES • Wide supply voltage range of | PHILIPS 飞利浦 | |||
20-bit bus-interface D-type flip-flop; positive-edge trigger 3-State DESCRIPTION The 74ALVCH16821 has two 10-bit, edge triggered registers, with each register coupled to a 3-State output buffer. The two sections of each register are controlled independently by the clock (nCP) and Output Enable (nOE) control gates. FEATURES • Wide supply voltage range of | PHILIPS 飞利浦 | |||
20-bit bus-interface D-type flip-flop; positive-edge trigger 3-State DESCRIPTION The 74ALVT16821 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. It is designed for VCC operation at 2.5V or 3.3V with I/O compatibility to 5V. FEATURES • 20-bit positive-edge triggered register • 5V I/O Compati | PHILIPS 飞利浦 | |||
20-bit bus-interface D-type flip-flop; positive-edge trigger 3-State DESCRIPTION The 74ALVT16821 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. It is designed for VCC operation at 2.5V or 3.3V with I/O compatibility to 5V. FEATURES • 20-bit positive-edge triggered register • 5V I/O Compati | PHILIPS 飞利浦 | |||
20-bit bus-interface D-type flip-flop; positive-edge trigger 3-State DESCRIPTION The 74ABT16821A high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. FEATURES • 20-bit positive-edge triggered register • Multiple VCC and GND pins minimize switching noise • Live insertion/extraction permitte | PHILIPS 飞利浦 |
BUF16821产品属性
- 类型
描述
- IC integration:
Gamma buffer
- Vin (Min) (V):
9
- Vin (Max) (V):
20
- Source driver voltage (Min) (V):
9
- Source driver voltage (Max) (V):
20
- Level shifter/scan driver (ch):
0
- Features:
Gamma buffer
- Rating:
Catalog
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
22+ |
10VSON |
9000 |
原厂渠道,现货配单 |
|||
TI/德州仪器 |
25+ |
HTSSOP28 |
32360 |
TI/德州仪器全新特价BUF16821AIPWPR即刻询购立享优惠#长期有货 |
|||
TI |
2430+ |
HTSS0P28 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ST |
25+ |
SMB |
20000 |
原装,请咨询 |
|||
TI/德州仪器 |
26+ |
HTSSOP28 |
20000 |
十年沉淀唯有原装 |
|||
TI |
23+ |
QFN10 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
TexasInstruments |
18+ |
ICPROGVOLTAGESOURCE10-SO |
6580 |
公司原装现货/欢迎来电咨询! |
|||
TI(德州) |
22+ |
5000 |
只做原装鄙视假货15118075546 |
||||
ST |
23+ |
SMB |
16900 |
正规渠道,只有原装! |
|||
TI/德州仪器 |
25+ |
HTSSOP-28 |
4987 |
强势库存!绝对原装公司现货! |
BUF16821规格书下载地址
BUF16821参数引脚图相关
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DdatasheetPDF页码索引
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