Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA

Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

文件：813.43 Kbytes Page：30 Pages

丝印代码：BUF16821；Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA

丝印代码：BUF16821；Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA

丝印代码：B16821Q1；BUF16821-Q1 Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1 Features 1• AEC-Q100 Qualified with: – Temperature Grade 3: –40°C to 85°C – HBM ESD Classification 2 – CDM ESD Classification C4B • 16-Channel P-Gamma, 2-Channel P-VCOM, 10- Bit Resolution • 16x Rewritable Nonvolatile Memory • Two Independent Pin-Selectable Memory Banks • Rail-to-Rail O

丝印代码：B16821Q1；BUF16821-Q1 Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1 Features 1• AEC-Q100 Qualified with: – Temperature Grade 3: –40°C to 85°C – HBM ESD Classification 2 – CDM ESD Classification C4B • 16-Channel P-Gamma, 2-Channel P-VCOM, 10- Bit Resolution • 16x Rewritable Nonvolatile Memory • Two Independent Pin-Selectable Memory Banks • Rail-to-Rail O

Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

文件：813.43 Kbytes Page：30 Pages

Programmable Gamma-Voltage Generator

文件：1.12903 Mbytes Page：38 Pages

20-bit bus-interface D-type flip-flop; positive-edge trigger 3-State

DESCRIPTION The 74ALVCH16821 has two 10-bit, edge triggered registers, with each register coupled to a 3-State output buffer. The two sections of each register are controlled independently by the clock (nCP) and Output Enable (nOE) control gates. FEATURES • Wide supply voltage range of

20-bit bus-interface D-type flip-flop; positive-edge trigger 3-State

DESCRIPTION The 74ALVCH16821 has two 10-bit, edge triggered registers, with each register coupled to a 3-State output buffer. The two sections of each register are controlled independently by the clock (nCP) and Output Enable (nOE) control gates. FEATURES • Wide supply voltage range of

20-bit bus-interface D-type flip-flop; positive-edge trigger 3-State

DESCRIPTION The 74ALVT16821 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. It is designed for VCC operation at 2.5V or 3.3V with I/O compatibility to 5V. FEATURES • 20-bit positive-edge triggered register • 5V I/O Compati

20-bit bus-interface D-type flip-flop; positive-edge trigger 3-State

DESCRIPTION The 74ALVT16821 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. It is designed for VCC operation at 2.5V or 3.3V with I/O compatibility to 5V. FEATURES • 20-bit positive-edge triggered register • 5V I/O Compati

20-bit bus-interface D-type flip-flop; positive-edge trigger 3-State

DESCRIPTION The 74ABT16821A high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. FEATURES • 20-bit positive-edge triggered register • Multiple VCC and GND pins minimize switching noise • Live insertion/extraction permitte