Bipolar Junction Transistor

FEATURES ● High voltage capability ● Features of good high temperature ● High switching speed APPLICATION Computer aided power and Switch-mode power supplies

超高反压系列（Bvceo>600V）

Silicon Rectifier Schottky Barrier

Description: The NTE6084 is a silicon power rectifier in a DO4 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: ● Guardring for Stress Protection ● Low Forward Voltage ● +150°C Operating Junction Temperature Capability ● Guaranteed Reverse A

PWM Power Control with Automatic Duty-cycle Reduction

Description The U6084B is a PWM-IC with bipolar technology designed for the control of an N-channel power MOSFET used as a high-side switch. The IC is ideal for use in the brightness control (dimming) of lamps such as in dashboard applications. For constant brightness, the preselected duty cycl

PWM Power Control with Automatic Duty Cycle Reduction

Description The U6084B is a bipolar technology PWM-IC designed for the control of an N-channel power MOSFET used as a high-side switch. The IC is ideal for use in the brightness control (dimming) of lamps such as, in dashboard applications. For a constant brightness the preselected duty cycle c

PWM Power Control with Automatic Duty Cycle Reduction

Description The U6084B is a bipolar technology PWM-IC designed for the control of an N-channel power MOSFET used as a high-side switch. The IC is ideal for use in the brightness control (dimming) of lamps such as, in dashboard applications. For a constant brightness the preselected duty cycle c

Precision CMOS Quad Operational Amplifier

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