Quad exclusive OR gate

Description BU4001B series ICs are 2-input positive logic NOR gates, each with four built-in circuits. A buffer achieved by an inverter added at the gate output improves the input / output propagation characteristics and minimizes variation in the propagation time caused by an increase in the loa

High Voltage CMOS LOGIC ICs

ROHM的逻辑门系列与4S、4000B系列兼容，拥有耐高压、各种功能的丰富的产品阵容。因此，可以使用于各种各样的应用中。 •低功耗\n•工作电源电压范围广(3 to 16(18)V)\n•高输入阻抗\n•高扇出\n•能够直接驱动L-TTL2输入、LS-TTL1\n•对于4S、4000B系列具有管脚互换性\n•对于4S、4000B系列功能兼容\n•丰富的封装种类;

High Voltage CMOS Logic ICs >Gate>

文件：505.65 Kbytes Page：22 Pages

封装/外壳：14-SOIC（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE XOR 4CH 2-INP 14SOP 集成电路（IC） 门和反相器

High Voltage CMOS Logic ICs >Gate>

文件：516.74 Kbytes Page：22 Pages

High Voltage CMOS Logic ICs >Gate>

文件：505.65 Kbytes Page：22 Pages

Quad 2-Input Exclusive-OR Gate

文件：585.69 Kbytes Page：16 Pages

封装/外壳：14-SOIC（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE XOR 4CH 2-INP 14SOP 集成电路（IC） 门和反相器

High Voltage CMOS Logic ICs >Gate>

文件：505.65 Kbytes Page：22 Pages

High Voltage CMOS Logic ICs >Gate>

文件：516.74 Kbytes Page：22 Pages

High Voltage CMOS Logic ICs >Gate>

文件：505.65 Kbytes Page：22 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res