Enhanced PowerBridge Rectifiers

* Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94 V-0 flammability rating. FEATURES • UL recognition file number E

Enhanced isoCink??Bridge Rectifiers

FEATURES • UL recognition file number E312394 • Thin single in-line package • Glass passivated chip junction • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU25065S) • Superior thermal conductivity • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material ca

SEMICONDUCTORS

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Enhanced isoCink+™ Bridge Rectifiers

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers.

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 700V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • High voltage • High speed switching APPLICATIONS • For use in horizontal deflection circuit of colour TV receivers

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) • High Switching Speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in horizontal deflection circuits of color TV receivers.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load va

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) High Speed Switching

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS The BU2508AF is silicon power transistor mounted in Jedec TO-3PF plastic package. They are designed for use in horizontal deflection circuits of color TV receivers. Compliance to RoHS.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) • High Switching Speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in horizontal deflection circuits of color TV receivers.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) • High Switching Speed APPLICATIONS • Designed for use in horizontal deflection circuits of color TV receivers.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations r

Silicon Diffused Power Transistor

BUJ103AUGENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) • High Switching Speed APPLICATIONS • Designed for use in horizontal deflection circuits of color TV receivers.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High voltage • High speed switching APPLICATIONS • For use in horizontal deflection circuits of colour TV receivers

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers.

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and c

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base dri

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generati on, high-voltage, high-speed switchi ng npn transistor with an integrated damper diode in a pl asti c ful l-pack envelope i ntendedfor use i n horizontal deflection circuits of colourtelevisi on receivers. Features exceptionaltolerance t

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • High voltage,high speed • Built-in damper diode APPLICATIONS • For use in horizontal deflection circuits of colour TV

NPN TRIPLE DIFFUSE PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) High Speed Switching

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) • High Switching Speed • Built-in Damper Diode APPLICATIONS • Designed for use in horizontal deflection circuits of color TV receivers.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and col

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) • High Switching Speed • Built-in Damper Diode APPLICATIONS • Designed for use in horizontal deflection circuits of color TV receivers.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base dri

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High voltage;high speed • Built-in damper diode APPLICATIONS • For use in horizontal deflection circuits of color TV receivers

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers.

Thin single in-line package

* Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition.Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94 V-0 flammability rating. FEATURES • UL recognition file number E309391 (

Enhanced isoCink Bridge Rectifiers

* Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition.Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94 V-0 flammability rating. FEATURES • UL recognition file number E309391 (

Bridge Rectifiers

文件：108.56 Kbytes Page：6 Pages

封装/外壳：4-SIP，BU-5S 包装：散装 描述：BRIDGE RECT 1P 800V 3.5A BU-5S 分立半导体产品 二极管 - 桥式整流器

Bridge Rectifiers

文件：108.56 Kbytes Page：6 Pages

Silicon Diffused Power Transistor

Silicon NPN Power Transistors

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SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

SEMICONDUCTORS

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Transistor

Silicon NPN Power Transistors

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Silicon NPN Power Transistors

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Silicon NPN Power Transistors

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SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

Silicon NPN Power Transistors

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Silicon Diffused Power Transistor

文件：71.46 Kbytes Page：7 Pages

Silicon NPN Power Transistors

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SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

封装/外壳：4-SIP，BU 包装：管件 描述：BRIDGE RECT 1P 800V 3.5A BU 分立半导体产品 二极管 - 桥式整流器

High-precision 10bit 4ch/6ch D/A Converters

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10bit 4channels , D/A converter (with output buffer)

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High-precision 10bit 4ch-E6ch Type D/A Converters

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High-precision 10bit 4ch-E6ch Type D/A Converters

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High-precision 10bit 4ch/6ch D/A Converters

文件：301.69 Kbytes Page：9 Pages

High-precision 10bit 4ch-E6ch Type D/A Converters

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Bridge Rectifiers

文件：108.56 Kbytes Page：6 Pages

Bridge Rectifiers

文件：108.56 Kbytes Page：6 Pages

Bridge Rectifiers

文件：108.56 Kbytes Page：6 Pages

Bridge Rectifiers

文件：108.56 Kbytes Page：6 Pages