Image Correction ICs for Panel

・图像数据支持QCIF尺寸（176×144）到最大WVGA+尺寸（864×480）\n・支持80系CPU总线接口或RGB接口\n・工作模式有图像增强模式、分析模式、转换模式、睡眠模式\n・通过2线式串行接口（I²C）可进行寄存器设定\n・用于图像适应LCD背光控制的PWM输出\n・内置边缘强调过滤器、伽马过滤器;

AIE: Adaptive Image Enhancer

文件：332.12 Kbytes Page：9 Pages

Camera Image Adaptive Enhancer IC for security devices

文件：383.54 Kbytes Page：6 Pages

AIE: Adaptive Image Enhancer

文件：332.12 Kbytes Page：9 Pages

AIE: Adaptive Image Enhancer

文件：332.12 Kbytes Page：9 Pages

AIE: Adaptive Image Enhancer

文件：332.12 Kbytes Page：9 Pages

Image Correction IC for Camera

文件：236.1 Kbytes Page：9 Pages

Image Correction IC for Camera

文件：236.1 Kbytes Page：9 Pages

封装/外壳：36-VFQFN 功能：增强器 包装：卷带（TR） 描述：IC VIDEO ADAPTV IMAGE ENH 36VQFN 集成电路（IC） 视频处理

视频 IC IC CAM IMAGE CORRRCT 36PIN

Real Time Video Processor ICs

Real Time Video Processor ICs

文件：431.46 Kbytes Page：13 Pages

封装/外壳：63-VFBGA 功能：处理器 包装：卷带（TR） 描述：IC VIDEO ADAPTV IMAGE ENH 63VBGA 集成电路（IC） 视频处理

Real Time Video Processor ICs

文件：431.46 Kbytes Page：13 Pages

Real Time Video Processor IC

文件：334.5 Kbytes Page：13 Pages

Real Time Video Processor ICs

文件：431.46 Kbytes Page：13 Pages

FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 400 to 1000 Volts CURRENT - 1.0 Ampere)

VOLTAGE 400 to 1000 Volts CURRENT 1.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low leakage. • Exceeds environmental standards of MI

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

Quad 2-input multiplexer

DESCRIPTION The 74LVC157A is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 and 5 V env

MOS LINEAR RF POWER FET

Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45 (Typ)

Silicon NPN Transistor Audio Power Amp, High Voltage Converter (Compl to NTE39)

Description: The NTE157 is a silicon NPN transistor in a TO126 type package designed for use in line–operated equipment such as audio output amplifiers, low–current, high–voltage converters, and AC line relays. Features: Excellent DC Current Gain: hFE = 30 to 250 @ IC = 100mA Curre