Smart Two Channel Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu

Smart Two Channel Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh

带有集成垂直功率 FET 的高压侧功率开关，提供嵌入式保护和诊断功能。

• Overload protection\n• Current limitation\n• Short circuit protection\n• Thermal shutdown\n• Overvoltage protection (including load dump)\n• Fast demagnetization of inductive loads\n• Reverse battery protection1)\n• Undervoltage and overvoltage shutdown with auto-restart and hysteresis\n• Open dra;

Smart Two Channel Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu

Smart Two Channel Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu

封装/外壳：TO-220-7 成形引线 包装：管件 描述：IC PWR SWITCH N-CHAN 1:1 TO220-7 集成电路（IC） 配电开关，负载驱动器

Fast demagnetization of inductive loads

文件：353.03 Kbytes Page：14 Pages

Smart High Side Switches - 2x100m?5,0-34V Limit(scr) 8A TO220

High Side Switches

封装/外壳：TO-220-7 包装：管件 描述：IC PWR SWITCH N-CHAN 1:1 TO220-7 集成电路（IC） 配电开关，负载驱动器

Fast demagnetization of inductive loads

文件：353.03 Kbytes Page：14 Pages

Silicon Rectifier, General Purpose, High Voltage, Standard Recovery (Surface Mount)

Features: High Temperature Metallurgically Bonded Glass Passivated Junction High Temperature Soldering Guaranteed: +450°C/5 Seconds at Terminals. Complete Device Submersible Temperature of +260°C/10 Seconds in Solder Bath.

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.