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BTS621L1E3230中文资料

厂家型号

BTS621L1E3230

文件大小

337.6Kbytes

页面数量

15

功能描述

Smart Two Channel Highside Power Switch

数据手册

下载地址一下载地址二到原厂下载

生产厂商

INFINEON

BTS621L1E3230数据手册规格书PDF详情

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions.

Features

• Overload protection

• Current limitation

• Short circuit protection

• Thermal shutdown

• Overvoltage protection (including load dump)

• Fast demagnetization of inductive loads

• Reverse battery protection1)

• Undervoltage and overvoltage shutdown with auto-restart and hysteresis

• Open drain diagnostic output

• Open load detection in ON-state

• CMOS compatible input

• Loss of ground and loss of Vbb protection

• Electrostatic discharge (ESD) protection

Application

• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

• All types of resistive, inductive and capacitve loads

• Replaces electromechanical relays, fuses and discrete circuits

BTS621L1E3230产品属性

  • 类型

    描述

  • 型号

    BTS621L1E3230

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    Smart Two Channel Highside Power Switch

更新时间:2025-12-3 17:53:00
供应商 型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
21+
TO-220
23600
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7000
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P-TO220-7
11846
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infineon
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NA
1386
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TO220-7
1001
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INFINEON/英飞凌
23+
TO220-7
50000
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Infineon Technologies
22+
PTO2207
9000
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