位置：首页 > IC中文资料第9872页 > BTS612N1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BTS612N1 | Smart Two Channel Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 |   | |
BTS612N1 | Smart Two Channel Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circui | Infineon 英飞凌 | | |
BTS612N1 | Fast demagnetization of inductive loads 文件：423.68 Kbytes Page：14 Pages | Infineon 英飞凌 | | |
Smart Two Channel Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circui | Infineon 英飞凌 | | ||
Fast demagnetization of inductive loads 文件：423.68 Kbytes Page：14 Pages | Infineon 英飞凌 | | ||
Smart Two Channel Highside Power Switch For Industrial Applications General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | Infineon 英飞凌 | |
BTS612N1产品属性
- 类型
描述
- 型号
BTS612N1
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
Smart Two Channel Highside Power Switch
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
infineon |
10+ |
TO263 |
7800 |
全新原装正品,现货销售 |
|||
INFINEON |
2023+ |
TO263-7 |
5800 |
进口原装,现货热卖 |
|||
??? |
2023+ |
13650 |
进口原装现货 |
||||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
INFIN |
24+ |
65230 |
|||||
Infineon(英飞凌) |
23+ |
TO-263-7 |
10000 |
只做全新原装,实单来 |
|||
INFINEON/英飞凌 |
24+ |
TO-263-6 |
60000 |
||||
INFINEON |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
Infineon(英飞凌) |
25+ |
标准封装 |
8800 |
公司只做原装,详情请咨询 |
|||
Infineon/英飞凌 |
2025+ |
PG-TO263-7-2 |
8000 |
BTS612N1规格书下载地址
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DdatasheetPDF页码索引
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