BTS5晶体管资料

  • BTS59/1000R别名:BTS59/1000R三极管、BTS59/1000R晶体管、BTS59/1000R晶体三极管

  • BTS59/1000R生产厂家

  • BTS59/1000R制作材料:GTO-Thy

  • BTS59/1000R性质

  • BTS59/1000R封装形式:直插封装

  • BTS59/1000R极限工作电压:1000V

  • BTS59/1000R最大电流允许值:15A

  • BTS59/1000R最大工作频率:<1MHZ或未知

  • BTS59/1000R引脚数:3

  • BTS59/1000R最大耗散功率

  • BTS59/1000R放大倍数

  • BTS59/1000R图片代号:B-70

  • BTS59/1000Rvtest:1000

  • BTS59/1000Rhtest:999900

  • BTS59/1000Ratest:15

  • BTS59/1000Rwtest:0

  • BTS59/1000R代换 BTS59/1000R用什么型号代替

BTS5价格

参考价格:¥18.1576

型号:BTS50055-1TMA 品牌:INFINEON 备注:这里有BTS5多少钱,2025年最近7天走势,今日出价,今日竞价,BTS5批发/采购报价,BTS5行情走势销售排行榜,BTS5报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Power PROFET™ 12V smart high-side power switch

Features • PRO-SIL™ ISO 26262-ready for supporting the integrator in evaluation of hardware element according to ISO 26262:2018 Clause 8-13 • One channel device • Low stand-by current • Reverse ON protection for low power dissipation in reverse battery condition • Ground loss protection • E

Infineon

英飞凌

Power PROFET™ 12V smart high-side power switch

Features • PRO-SIL™ ISO 26262-ready for supporting the integrator in evaluation of hardware element according to ISO 26262:2018 Clause 8-13 • One channel device • Low stand-by current • Reverse ON protection for low power dissipation in reverse battery condition • Ground loss protection • E

Infineon

英飞凌

Power PROFET™ 12V smart high-side power switch

Features • PRO-SIL™ ISO 26262-ready for supporting the integrator in evaluation of hardware element according to ISO 26262:2018 Clause 8-13 • One channel device • Low stand-by current • Reverse ON protection for low power dissipation in reverse battery condition • Ground loss protection • E

Infineon

英飞凌

Smart High-Side Power Switch

Features • One channel device • Low Stand-by current • Wide input voltage range (can be driven by logic levels 3.3V and 5V as well as directly by VS) • Electrostatic discharge protection (ESD) • Optimized Electromagnetic Compatibility (EMC) • Logic ground independent from load ground • Very

Infineon

英飞凌

Smart High-Side Power Switch

1 Overview Application • Suitable for resistive, inductive and capacitive loads • Replaces electromechanical relays, fuses and discrete circuits • Most suitable for loads with high inrush current, such as lamps Basic Features • Two channel device • Very low stand-by current • 3.3 V and 5

Infineon

英飞凌

Smart High-Side Power Switch

1 Overview Application • Suitable for resistive, inductive and capacitive loads • Replaces electromechanical relays, fuses and discrete circuits • Most suitable for loads with high inrush current, such as lamps Basic Features • Two channel device • Very low stand-by current • 3.3 V and 5

Infineon

英飞凌

Smart High-Side Power Switch

Description The BTS5120-2EKA is a 120 mΩ dual channel Smart High-Side Power Switch, embedded in a PG-DSO-14-40 EP, Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in S

Infineon

英飞凌

Smart High-Side Power Switch

Description The BTS5180-2EKA is a 180 mΩ dual channel Smart High-Side Power Switch, embedded in a PG-DSO-14-40 EP, Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in S

Infineon

英飞凌

Smart High-Side Power Switch Two Channels: 2 x 140m??Status Feedback

General Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. • Providing embedded protective functions Applications • µC compatible high-side power switch with dia

Infineon

英飞凌

Smart High-Side Power Switch Two Channels: 2 x 140m??Status Feedback

General Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. • Fully protected by embedded protection functions Basic Functions • Very low standby current • CMO

Infineon

英飞凌

Smart High-Side Power Switch Two Channels: 2 x 90m??Status Feedback

Smart High-Side Power Switch Two Channels: 2 x 90mΩ Status Feedback General Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. • Providing embedded protecti

Infineon

英飞凌

Smart High-Side Power Switch Two Channels: 2 x 90m??Status Feedback

Smart High-Side Power Switch Two Channels: 2 x 90mΩ Status Feedback General Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. • Providing embedded protecti

Infineon

英飞凌

Smart High-Side Power Switch PROFET Two Channels, 140 m 廓

Product Summary The BTS5231-2GS is a dual channel high-side power switch in PG-DSO-14-31 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology. Basi

Infineon

英飞凌

Smart High-Side Power Switch

Product Summary The BTS5235-2G is a dual channel high-side power switch in PG-DSO-20-43 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology. Basic

Infineon

英飞凌

Smart High-Side Power Switch PROFET Two Channels, 25 mΩ

Basic Features • Very low standby current • 3.3 V and 5 V compatible logic pins • Improved electromagnetic compatibility (EMC) • Stable behavior at under-voltage • Logic ground independent from load ground • Secure load turn-off while logic ground disconnected • Optimized inverse current ca

Infineon

英飞凌

Smart High-Side Power Switch

Overview Product Summary The BTS5242-2L is a dual channel high-side power switch in PG-DSO-12-9 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technolog

Infineon

英飞凌

Smart Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Shor

SIEMENS

西门子

Smart Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features ● Overload protection ● Current limitation ● Shor

SIEMENS

西门子

Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)

General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection functions. Features •Overload protection •Current l

SIEMENS

西门子

Smart Highside High Current Power Switch

General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS® chip on chip technology. Providing embedded protective functions. Features •Overload protection •Current limitation

Infineon

英飞凌

Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)

General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitatio

SIEMENS

西门子

Smart Highside High Current Power Switch

General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Shor

Infineon

英飞凌

Smart Highside High Current Power Switch

General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Shor

Infineon

英飞凌

SPI Power Controller

Description The SPOC - BTS5562E is a five channel high-side smart power switch in PG-DSO-36-36 package providing embedded protective functions. It is specially designed to control standard exterior lighting in automotive applications. It is designed to drive lamps up to 3*27W + 2*10W.

Infineon

英飞凌

SPI Power Controller

Overview The SPOC - BTS5566G is a five channel high-side smart power switch in PG-DSO-36-34 package providing embedded protective functions. It is especially designed to control standard exterior lighting in automotive applications. It is designed to drive lamps up to 3*27W + 2*10W. Configur

Infineon

英飞凌

Smart Highside High Current Power Switch

General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitatio

SIEMENS

西门子

SPI Power Controller

Description The BTS56033-LBB is a six channel high-side smart power switch in TSON-24-1 package providing embedded protective functions. It is specially designed to control standard exterior lighting in automotive applications. In order to use the same hardware, the device can be configured to bu

Infineon

英飞凌

高边开关

Infineon

英飞凌

单通道智能高侧电源开关,提供保护功能和诊断

Infineon

英飞凌

汽车级智能高边开关 | PROFET™

Infineon

英飞凌

Smart High-Side Power Switch

文件:888.43 Kbytes Page:51 Pages

Infineon

英飞凌

Smart High-Side Power Switch

文件:2.41521 Mbytes Page:47 Pages

Infineon

英飞凌

封装/外壳:TO-263-7,D²Pak(6 引线 + 接片) 包装:卷带(TR) 描述:IC PWR SWITCH N-CHAN 1:1 TO263-7 集成电路(IC) 配电开关,负载驱动器

Infineon

英飞凌

Smart High-Side Power Switch

文件:1.72056 Mbytes Page:51 Pages

Infineon

英飞凌

封装/外壳:TO-263-7,D²Pak(6 引线 + 接片) 包装:卷带(TR) 描述:IC PWR SWITCH N-CHAN 1:1 TO263-7 集成电路(IC) 配电开关,负载驱动器

Infineon

英飞凌

Smart High-Side Power Switch

文件:903.34 Kbytes Page:51 Pages

Infineon

英飞凌

Smart High-Side Power Switch

文件:924.39 Kbytes Page:51 Pages

Infineon

英飞凌

Smart High-Side Power Switch

文件:1.3873 Mbytes Page:44 Pages

Infineon

英飞凌

Smart High-Side Power Switch

文件:1.81255 Mbytes Page:29 Pages

Infineon

英飞凌

Smart High-Side Power Switch PROFET?

文件:1.1923 Mbytes Page:33 Pages

Infineon

英飞凌

Smart Highside High Current Power Switch

文件:304.59 Kbytes Page:18 Pages

Infineon

英飞凌

Smart Highside High Current Power Switch

文件:304.59 Kbytes Page:18 Pages

Infineon

英飞凌

Smart Highside High Current Power Switch

文件:299.4 Kbytes Page:18 Pages

Infineon

英飞凌

Smart Highside High Current Power Switch

文件:296.28 Kbytes Page:17 Pages

Infineon

英飞凌

Smart High-Side Power Switch PROFET?

文件:1.21567 Mbytes Page:33 Pages

Infineon

英飞凌

Smart High-Side Power Switch

文件:2.02033 Mbytes Page:39 Pages

Infineon

英飞凌

Smart High-Side Power Switch

文件:1.90635 Mbytes Page:39 Pages

Infineon

英飞凌

Smart High-Side Power Switch

文件:1.90635 Mbytes Page:39 Pages

Infineon

英飞凌

Smart High-Side Power Switch

文件:1.68886 Mbytes Page:33 Pages

Infineon

英飞凌

Smart High-Side Power Switch PROFET?

文件:1.19195 Mbytes Page:33 Pages

Infineon

英飞凌

Smart High-Side Power Switch PROFET??One Channel

文件:562.58 Kbytes Page:27 Pages

Infineon

英飞凌

Smart High-Side Power Switch PROFET??One Channel

文件:559.04 Kbytes Page:27 Pages

Infineon

英飞凌

Smart High-Side Power Switch PROFET?

文件:1.19222 Mbytes Page:33 Pages

Infineon

英飞凌

Smart High-Side Power Switch PROFET??One Channel

文件:567.75 Kbytes Page:27 Pages

Infineon

英飞凌

Smart High-Side Power Switch PROFET??One Channel

文件:576.42 Kbytes Page:27 Pages

Infineon

英飞凌

Smart High-Side Power Switch

文件:560.55 Kbytes Page:27 Pages

Infineon

英飞凌

Smart High-Side Power Switch

文件:557.14 Kbytes Page:27 Pages

Infineon

英飞凌

Smart High-Side Power Switch

文件:562.87 Kbytes Page:27 Pages

Infineon

英飞凌

Smart High-Side Power Switch

文件:1.44049 Mbytes Page:54 Pages

Infineon

英飞凌

Smart Highside High Current Power Switch

文件:311.27 Kbytes Page:18 Pages

Infineon

英飞凌

BTS5产品属性

  • 类型

    描述

  • 型号

    BTS5

  • 制造商

    Infineon Technologies AG

  • 功能描述

    Power Switch Hi Side 33A 7-Pin(6+Tab) TO-263

  • 制造商

    Infineon Technologies AG

  • 功能描述

    HIC-PROFET - Tape and Reel

更新时间:2025-12-26 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
1118
优势代理渠道,原装正品,可全系列订货开增值税票
INENOI
20+
SOT263-7
11950
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON
20+
TO-263-7
20500
汽车电子原装主营-可开原型号增税票
INFINEON/英飞凌
22+
TO-263-7
12500
原装正品支持实单
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
Infineon/英飞凌
24+
PG-TO263-7
30000
原装正品公司现货,假一赔十!
Infineon/英飞凌
21+
PG-TO263-7
6820
只做原装,质量保证
Infineon(英飞凌)
2021+
PG-TO263-7
499
Infineon Technologies
25+
原封装
77600
郑重承诺只做原装进口现货

BTS5数据表相关新闻