Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh

Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features ● Overload protection ● Current limitation ● Short ci

Overload protection

文件：374.05 Kbytes Page：12 Pages

Overload protection

文件：374.05 Kbytes Page：12 Pages

封装/外壳：TO-220-5 包装：管件 描述：IC PWR SWITCH N-CHAN 1:1 TO220-5 集成电路（IC） 配电开关，负载驱动器

Card Edge Connectors 0.156” (3.96mm) Pitch

Features: • 0.156” (3.96mm) contact spacing by 0.200” (5.08mm) row spacing • Accepts 0.062” (1.57mm) nominal thickness P.C. board • Low profile insulator body, 0.473” (12.01mm) • Contact termination options include P.C. tail, wire hole, wire wrap, 90° and extender board bends • Single or dual

Commercial miniature 6 mm cermet trimmer potentiometer

文件：241.34 Kbytes Page：2 Pages

Test insulation to 400M廓

文件：134.71 Kbytes Page：1 Pages

Label format - Old format order code cross reference

文件：3.00256 Mbytes Page：48 Pages

Label format - Old format order code cross reference

文件：3.00256 Mbytes Page：48 Pages