TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic)

Features ●N channel ●Enhancement mode ●Temperature sensor with thyristor characteristic ●The drain pin is electrically shorted to the tab

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 17A@ TC=25℃ · Drain Source Voltage -VDSS= 50V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)

Features ●N channel ●Enhancement mode ●Temperature sensor with thyristor characteristic ●The drain pin is electrically shorted to the tab

TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic)

TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic)

Features ●N channel ●Enhancement mode ●Temperature sensor with thyristor characteristic ●The drain pin is electrically shorted to the tab

TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)

●N channel\n●Enhancement mode\n●Temperature sensor with thyristor characteristic\n●The drain pin is electrically shorted to the tab;

TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)

Features ●N channel ●Enhancement mode ●Temperature sensor with thyristor characteristic ●The drain pin is electrically shorted to the tab

N-Channel TEMPFET

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its xternal resistor bias network. The BRT eliminate

CASE 463-01, STYLE 1 SOT-416/SC-90

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminat

CASE 463-01, STYLE 1 SOT-416/SC-90

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital trans

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff